PS21343-N Datasheet, PDF (1/9 Pages) Mitsubishi Electric Semiconductor – TRANSFER-MOLD TYPE INSULATED TYPE

PS21343-N
MITMSUITBSIUSBHISSHEIMSIECMOINCDOUNCDTUOCRTO<RInt<eIlnlitgeellnigtePnotwPeorwMeor dMuoled>ule>
PS21P3S42313-4N3-N
TRATNRSAFNESRF-EMRO-MLDOLTDYPTEYPE
INSIUNLSAUTLEADTETDYPTEYPE
INTEGRATED POWER FUNCTIONS
600V/10A low-loss 4th generation (planar) IGBT inverter
bridge for 3 phase DC-to-AC power conversion.
INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS
• For upper-leg IGBTS : Drive circuit, High voltage isolated high-speed level shifting, Control circuit under-voltage (UV) protection.
Note : Bootstrap supply scheme can be applied.
• For lower-leg IGBTS : Drive circuit, Control circuit under-voltage protection (UV), Short-circuit protection (SC).
• Fault signaling : Corresponding to a SC fault (Low-side IGBT) or a UV fault (Low-side IGBT).
• Input interface : 5V line CMOS/TTL compatible, Schmitt Trigger receiver circuit.
APPLICATION
AC100V~200V inverter drive for motor control.
Fig. 1 PACKAGE OUTLINES
HEAT SINK SIDE
(3.556)
(3.556)
(1.656)
TERMINAL CODE
(1) TERMINAL
(0.5)
(0.5)
1 VUFS
2 (UPG)
3 VUFB
4 VP1
5 (COM)
PCB
6 UP
(1)
PATTERN ^{7 VVFS}
(1)
(0.5)
(1.8MIN)
(1.9) _SLIT
8 (VPG)
9 VVFB
(PCB LAYOUT)
10 VP1
(1.778 × 26)
DUMMY PIN
Detail A
11 (COM)
*Note2 _{12 VP}
(1.778)
(6.25) (6.25) (6.25) (8) (8)
A
(5)
13 VWFS
14 (WPG)
15 VWFB
28 27 26 25 24 23 22 21 20 19 18 16 15 13 12 10 9 8 7 6 5 4
17
14
11
321
(φ^{2 DEPTH 2)}
29
30
Type name , Lot No.
(φ^3.3)
16 VP1
17 (COM)
18 WP
19 (UNG)
20 VNO(NC)
21 UN
22 VN
HEAT SINK SIDE
23 WN
(35_°)
24 FO
25 CFO
26 CIN
27 VNC
35
34
33
32
31
28 VN1
29 (WNG)
30 (VNG)
(7.62)
(4MIN)
31 P
32 U
(7.62 × 4)
(1.25)
33 V
(41)
(2.5)
34 W
35 N
(42)
Dimensions in mm
(49)
*Note1:(***) = Dummy Pin.
*Note 2: In order to increase the surface distance between terminals, cut a slit, etc. on the PCB surface
when mounting a module.
Sep. 2001