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PS21065 Datasheet, PDF (1/2 Pages) Mitsubishi Electric Semiconductor – Generation DIP and Mini-DIP-IPM
2.10 3rd Generation DIP and Mini-DIP-IPM (Dual-in-line Package Intelligent Power Modules)
Features:
• Employing 5th generation planar IGBT chips with 0.6µm design rule
or CSTBT™ technology with superior loss performance
• Ultra compact dual or single-in-line transfer mold package
(compatible with 2nd generation)
• Including driver and protection circuitry (UV, SC)
• DIP-IPM with reduction of thermal resistance by 20%
• 2500Vrms isolation voltage
• High-active interface logic for direct connection to a 3V or 5V MCU
• Highest reliability and optimised EMI performance
• Available from 3A to 50A / 600V for motor ratings from 0.1kW to 3.7kW
• Optional with open emitter topology for vector control
• All Mitsubishi DIP and Mini-DIP-IPMs have lead-free terminals
• From January 2006 onwards, all DIP and Mini-DIP-IPMs will
be supplied with completely lead-free technology
2.
Line-up DIP, Mini-DIP & SIP-IPM
Type
Isolation Voltage VCES
(V)
(V)
Motor Rating (kW)
0.1
0.2
0.4
0.75
1.5
2.2
3.7
Super-DIP
PS21065
PS21067
PS21069
DIP
2500
Mini-DIP
SIP
* Open Emitter Topology
600
PS21661-FR
PS21661-RZ
PS21562-P
PS21562-SP*
PS21563-P
PS21563-SP*
PS21864-P
PS21564-P
PS21564-SP*
PS21865-P
Type Number
PS21562-P
PS21563-P
PS21564-P
PS21864-P
PS21865-P
PS21867-P
PS21869-P
PS21562-SP
PS21563-SP
PS21564-SP
PS21065
PS21067
PS21069
PS21661-RZ/-FR
VCES
(V)
Applicable
Motor Ratings
(kW)
600
0.2
600
0.4
600
0.75
600
0.75
600
1.5
600
2.2
600
3.7
600
0.2
600
0.4
600
0.75
600
1.5
600
2.2
600
3.7
600
0.1
Electrical Characteristics
IC
(A)
fC
(kHz)
Isolation
Voltage
(V)
VCE(sat)
@ Tj=25°C
(V)
Typ. Max.
Typical Switching Times
ton
trr tc(on) toff tc(off)
(µs) (µs) (µs) (µs) (µs)
Mini-DIP-IPM 600 Volt
5
20 2500 1.6 2.1 1.20 0.30 0.40 1.30 0.50
10
20 2500 1.6 2.1 1.20 0.30 0.40 1.40 0.50
15
20 2500 1.45 1.95 1.20 0.30 0.40 1.50 0.50
DIP-IPM 600 Volt
15
20 2500 1.7 2.2 1.50 0.30 0.50 1.40 0.50
20
20 2500 1.6 2.1 1.30 0.30 0.40 1.60 0.50
30
20 2500 1.6 2.1 1.30 0.30 0.40 1.70 0.50
50
20 2500 1.5 2.0 1.30 0.30 0.40 2.00 0.65
Mini-DIP-IPM 600 Volt With Open Emitter Topology
5
20 2500 1.6 2.1 1.20 0.30 0.40 1.30 0.50
10
20 2500 1.6 2.1 1.20 0.30 0.40 1.40 0.50
15
20 2500 1.45 1.95 1.20 0.30 0.40 1.50 0.50
Super-DIP-IPM 600 Volt With Open Emitter TopologySIP-IPM 600 Volt
20
20 2500 1.6 2.1 1.30 0.30 0.40 1.60 0.50
30
20 2500 1.6 2.1 1.30 0.30 0.40 1.70 0.50
50
20 2500 1.5 2.0 1.30 0.30 0.40 2.00 0.65
SIP-IPM 600 Volt
3
15 2500 1.6 2.15 0.85 0.20 0.35 1.00 0.55
* Package drawing D6 see under 2.8. 1200V DIP-IPM, p. 50
PS21867-P
PS21869-P
Thermal & Mechanical
Characteristics
IGBT
Diode
Rth(j-f)
(°C/W)
Rth(j-f)
(°C/W)
Package-
No.
6.0
6.5
D4
5.0
6.5
D4
4.5
6.5
D4
2.30
3.2
D3
1.90
3.0
D3
1.65
3.0
D3
1.42
2.0
D3
6.0
6.5
D5
5.0
6.5
D5
4.5
6.5
D5
1.90
2.85
D6*
1.65
2.55
D6*
1.42
2.30
D6*
9.0
9.0
SIP1
54 Power Devices General Catalogue 2005
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