PM75RLA120 Datasheet, PDF (1/6 Pages) Mitsubishi Electric Semiconductor – FLAT-BASE TYPE INSULATED PACKAGE

MITSUBISHI <INTELLIGENT POWER MODULES>
PM75RLA120
FLAT-BASE TYPE
INSULATED PACKAGE
PM75RLA120
FEATURE
a) Adopting new 5th generation IGBT (CSTBT) chip, which
performance is improved by 1µm fine rule process.
For example, typical Vce(sat)=1.9V @Tj=125°C
b) I adopt the over-temperature conservation by Tj detection of
CSTBT chip, and error output is possible from all each con-
servation upper and lower arm of IPM.
c) New small package
Reduce the package size by 10%, thickness by 22% from
S-DASH series.
d) Current rating of brake part increased.
53% for the current rating of inverter part.
• 3φ 75A, 1200V Current-sense IGBT type inverter
• 40A, 1200V Current-sense regenerative brake IGBT
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for, short-
circuit, over-temperature & under-voltage (P-Fo available
from upper arm devices)
• Acoustic noise-less 11kW/15kW class inverter application
APPLICATION
General purpose inverter, servo drives and other motor controls
PACKAGE OUTLINES
7
19.75 ^3.25 16
3-2
120
106
16
16
3-2
3-2
15.25
6-2
6-φ6
B
10.75
32.75
U
V
W
23
23
23
19- 0.5
Dimensions in mm
2-φ5.5
MOUNTING HOLES
Terminal code
1. VUPC
2. UFO
3. UP
4. VUP1
5. VVPC
6. VFO
7. VP
8. VVP1
9. VWPC
10. WFO
11. WP
12. VWP1
13. VNC
14. VN1
15. Br
16. UN
17. VN
18. WN
19. Fo
Oct. 2003