PM25RLA120 Datasheet, PDF (1/6 Pages) Mitsubishi Electric Semiconductor – INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE

PM25RLA120
MITSUBISHI <INTELLIGENT POWER MODULES>
PM25RLA120
FLAT-BASE TYPE
INSULATED PACKAGE
FEATURE
a) Adopting new 5th generation IGBT (CSTBT) chip, which
performance is improved by 1µm fine rule process.
For example, typical Vce(sat)=1.9V @Tj=125°C
b) I adopt the over-temperature conservation by Tj detection of
CSTBT chip, and error output is possible from all each con-
servation upper and lower arm of IPM.
c) Current rating of brake part increased.
60% for the current rating of inverter part.
• 3φ 25A, 1200V Current-sense IGBT type inverter
• 15A, 1200V Current-sense regenerative brake IGBT
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for, short-
circuit, over-temperature & under-voltage (P-Fo available
from upper arm devices)
• Acoustic noise-less 3.7kW class inverter application
APPLICATION
General purpose inverter, servo drives and other motor controls
PACKAGE OUTLINES
7
19.75 ^3.25 16
3-2
120
106
16
16
3-2
3-2
15.25
6-2
6-φ6
B
10.75
32.75
U
V
W
23
23
23
19- 0.5
Dimensions in mm
2-φ5.5
MOUNTING HOLES
Terminal code
1. VUPC
2. UFO
3. UP
4. VUP1
5. VVPC
6. VFO
7. VP
8. VVP1
9. VWPC
10. WFO
11. WP
12. VWP1
13. VNC
14. VN1
15. Br
16. UN
17. VN
18. WN
19. Fo
Oct. 2003