PM150RSE120 Datasheet, PDF (1/6 Pages) Mitsubishi Electric Semiconductor – MITSUBISHI INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE

PM150RSE120
MITMSUITBSIUSBHIS<HINI T<EINLTLEIGLLEINGTENPOT WPOERWEMRODMUOLDEUSL>ES>
PM150PRMS15E0R1S2E0120
FLAFTL-BATA-SBEASTEYPTEYPE
INSIUNLSAUTLEADTEPDACPKAACGKEAGE
FEATURE
a) Adopting new 4th generation planar IGBT chip, which per-
formance is improved by 1µm fine rule process.
b) Using new Diode which is designed to get soft reverse
recovery characteristics.
• 3φ 150A, 1200V Current-sense IGBT for 15kHz switching
• 50A, 1200V Current-sense regenerative brake IGBT
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for over-
current, short-circuit, over-temperature & under-voltage
• Acoustic noise-less 30kW class inverter application
APPLICATION
General purpose inverter, servo drives and other motor controls
PACKAGE OUTLINES
Dimensions in mm
0.5 ±0.3
39.7
135 ±1
120.5 ±0.5
LABEL
1 23
4 56
789
11 13 15
10 12 14 16
3.22 10.16 10.16 10.16
2-2.54 2-2.54 2-2.54 6-2.54
67.4
74.4
4- φ5.5
24.1
MOUNTING
HOLES
10.5
U
V
W
51.5
26
26
A
2-φ2.54
16- 0.64
4-R6
6-M5 NUTS
Screwing depth
Min9.0
Terminal code
1. VUPC
2. UP
3. VUP1
4. VVPC
5. VP
6. VVP1
7. VWPC
8. WP
9. VWP1
10. VNC
11. VN1
12. Br
13. UN
14. VN
15. WN
16. FO
φ2.54
3.22 ^2-2.54
0.64
A : DETAIL
Sep. 2001