PM150RSD120_05 Datasheet, PDF (1/9 Pages) Mitsubishi Electric Semiconductor – INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE

PM150RSD120
MITMSUITBSIUSBHIS<HINI T<EINLTLEIGLLEINGTENPOT WPOEWR EMROMDUOLDEUSL>ES>
PM150PRMS15D0R1S2D0120
FLAFTL-ABTA-SBEASTEYPTEYPE
INSIUNLSAUTLEADTEPDACPKAACGKAEGE
FEATURE
a) Adopting new 4th generation planar IGBT chip, which per-
formance is improved by 1µm fine rule process.
b) Using new Diode which is designed to get soft reverse
recovery characteristics.
• 3φ 150A, 1200V Current-sense IGBT for 15kHz switching
• 50A, 1200V Current-sense regenerative brake IGBT
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for over-
current, short-circuit, over-temperature & under-voltage
(P-Fo available from upper leg devices)
• Acoustic noise-less 30kW class inverter application
• UL Recognized Yellow Card No.E80276(N)
File No.E80271
APPLICATION
General purpose inverter, servo drives and other motor controls
PACKAGE OUTLINES
Dimensions in mm
40.68
135 ±1
120.5 ±0.5
LABEL
1234
5678
9 11
13 15 17 19
10 12
14 16 18
3.22
10 10 10
3-2 3-2 3-2 6-2
66.44
4- φ5.5
24.1
MOUNTING
HOLES
10.5
0.5 ±0.3
51.5
A
U
V
W
26
2-φ2.54
26
19- 0.5
4-R6
6-M5 NUTS
Screwing depth
Min9.0
Terminal code
1. VUPC
2. UFO
3. UP
4. VUP1
5. VVPC
6. VFO
7. VP
8. VVP1
9. VWPC
10. WFO
11. WP
12. VWP1
13. VNC
14. VN1
15. Br
16. UN
17. VN
18. WN
19. FO
φ2.54
3.22 ^3-2
0.5
A : DETAIL
Jul. 2005