PM100RSE060_09 Datasheet, PDF (1/9 Pages) Mitsubishi Electric Semiconductor – FLAT-BASE TYPE INSULATED PACKAGE

PM100RSE060
MITMSUITBSIUSBHIS<HINI T<EINLTLEIGLLEINGTENPOT WPOEWR EMROMDUOLDEUSL>ES>
PM100PRMS10E0R0S6E0060
FLAFTL-ABTA-SBEASTEYPTEYPE
INSIUNLSAUTLEADTEPDACPKAACGKAEGE
FEATURE
a) Adopting new 4th generation planar IGBT chip, which per-
formance is improved by 1µm fine rule process.
For example, typical VCE(sat)=1.7V
b) Using new Diode which is designed to get soft reverse
recovery characteristics.
• 3φ 100A, 600V Current-sense IGBT for 15kHz switching
• 30A, 600V Current-sense regenerative brake IGBT
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for over-
current, short-circuit, over-temperature & under-voltage
• Acoustic noise-less 11kW class inverter application
• UL Recognized Yellow Card No.E80276(N)
File No.E80271
APPLICATION
General purpose inverter, servo drives and other motor controls
PACKAGE OUTLINES
Dimensions in mm
110±1
95±0.5
2-2.54 2-2.54 2-2.54 6-2.54
17.02 10.16 10.16 10.16
3.22
123
4 56
78 9
10 12 14 16
11 13 15
12
4-φ5.5
MOUNTING HOLES
Screwing depth
Min9.0
Terminal code
1. VUPC
2. UP
3. VUP1
4. VVPC
5. VP
6. VVP1
7. VWPC
8. WP
9. VWP1
10. VNC
11. VN1
12. Br
13. UN
14. VN
15. WN
16. FO
W
0.5±0.3
24.5
A
V
U
26
26
67.4
16- 0.64
4-R6
6-M5NUTS
2-φ2.54
21.2
22
+1.0
–0.5
φ2.54
3.22 ^2-2.54 _0.64
LABEL
A : DETAIL
Jul. 2005