PM100RLA120_05 Datasheet, PDF (1/9 Pages) Mitsubishi Electric Semiconductor – INTELLIGENT POWER MODULES> FLAT-BASE TYPE INSULATED PACKAGE

MITSUBISHI <INTELLIGENT POWER MODULES>
PM100RLA120
FLAT-BASE TYPE
INSULATED PACKAGE
PM100RLA120
FEATURE
a) Adopting new 5th generation IGBT (CSTBT) chip, which
performance is improved by 1µm fine rule process.
For example, typical Vce(sat)=1.9V @Tj=125°C
b) I adopt the over-temperature conservation by Tj detection of
CSTBT chip, and error output is possible from all each con-
servation upper and lower arm of IPM.
c) Current rating of brake part increased.
50% for the current rating of inverter part.
• 3φ 100A, 1200V Current-sense IGBT type inverter
• 50A, 1200V Current-sense regenerative brake IGBT
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for, short-
circuit, over-temperature & under-voltage (P-Fo available
from upper arm devices)
• Acoustic noise-less 18.5kW/22kW class inverter application
• UL Recognized Yellow Card No.E80276(N)
File No.E80271
APPLICATION
General purpose inverter, servo drives and other motor controls
PACKAGE OUTLINES
6.05
6-M5 Nuts
135
110±0.5
26
26
10.5
10.5
10.5
40.5
6.05
11.7
13
6
W
V
U
Dimensions in mm
13(Screwing Depth)
71.5
66.5
3.25 ^6-2 10 ^3-2 10 ^3-2 10 ^3-2 3.25
4-φ5.5
Mounting Holes
19 13
9
5
1
2-φ2.5
19- 0.5
30.15
11
LABEL
4
Terminal code
1. VUPC 6. VFO
2. UFO 7. VP
3. UP 8. VVP1
4. VUP1 9. VWPC
5. VVPC 10. WFO
11. WP 16. UN
12. VWP1 17. VN
13. VNC 18. WN
14. VN1 19. Fo
15. Br
May 2005