PM100CSE120_09 Datasheet, PDF (1/8 Pages) Mitsubishi Electric Semiconductor – FLAT-BASE TYPE INSULATED PACKAGE

PM100CSE120
MITMSUITBSIUSBHIS<HINI T<EINLTLEIGLLEINGTENPOT WPOEWR EMROMDUOLDEUSL>ES>
PM100PCMS10E0C1S2E0120
FLAFTL-ABTA-SBEASTEYPTEYPE
INSIUNLSAUTLEADTEPDACPKAACGKAEGE
FEATURE
a) Adopting new 4th generation planar IGBT chip, which per-
formance is improved by 1µm fine rule process.
b) Using new Diode which is designed to get soft reverse
recovery characteristics.
• 3φ 100A, 1200V Current-sense IGBT for 15kHz switching
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for over-
current, short-circuit, over-temperature & under-voltage
• Acoustic noise-less 18.5/22kW class inverter application
• UL Recognized Yellow Card No.E80276(N)
File No.E80271
APPLICATION
General purpose inverter, servo drives and other motor controls
PACKAGE OUTLINES
Dimensions in mm
0.5 ±0.3
39.7
135 ±1
120.5 ±0.5
LABEL
1 23
4 56
789
11 13 15
10 12 14 16
3.22 10.16 10.16 10.16
2-2.54 2-2.54 2-2.54 6-2.54
67.4
74.4
4- φ5.5
24.1
MOUNTING
HOLES
10.5
U
V
W
51.5
26
26
A
2-φ2.54
16- 0.64
4-R6
6-M5 NUTS
Screwing depth
Min9.0
Terminal code
1. VUPC
2. UP
3. VUP1
4. VVPC
5. VP
6. VVP1
7. VWPC
8. WP
9. VWP1
10. VNC
11. VN1
12. NC
13. UN
14. VN
15. WN
16. FO
φ2.54
3.22 ^2-2.54
0.64
A : DETAIL
Jul. 2005