PD8XX3 Datasheet, PDF (1/3 Pages) Mitsubishi Electric Semiconductor – InGaAs AVALANCHE PHOTO DIODES

TYPE
NAME
PD8933
MITSUBISHI LASER DIODES
PD8XX3 SERIES
InGaAs AVALANCHE PHOTO DIODES
DESCRIPTION
PD8XX3 series are InGaAs avalanche photodiode which has
a sensitive area of φ35 µ m, PD8XX3 is suitable for receiving
the light having a wavelength band of 1000 to 1600nm. This
photodiode features low noise, a high quantum efficiency and
a high speed response is suitable for the light receiving
element for long - distance optical communications.
FEATURES
• φ35 µ m active diameter
• Low noise
• High speed response
• Small dark current
• High quantum efficiency
APPLICATION
Receiber for long-distance fiber-optic communication systems
ABSOLUTE MAXIMUM RATING
Symbol
IR
IF
TC
Tstg
Parameter
Reverse current
Forward current
Case temperature
Storage temperature
Conditions
-
-
-
-
Ratings
Unit
500
µA
2
mA
-40~+85
˚C
-40~+100
˚C
ELECTRICAL /OPTICAL CHARACTERISTICS ^{(TC = 25˚C)}
Symbol
V(BR)R
Ct
ID
η
fc
parameter
Breakdown voltage
Capacitance
Dark current
Quantum efficiency
Cutoff frequency (-3dB)
Test conditions
IR = 100 µ A
VR = 0.9V (BR) R,f = 1MHz
VR = 0.9V (BR) R
M = 1, λ = 1550nm
M = 10,RL = 50Ω, -3dB
Limits
Unit
Min.
Typ.
Max.
40
60
90
V
-
0.5
0.7
pF
-
30
60
nA
-
80
-
%
1.8
2.5
-
GHz
SEP.2000