PD8XX2_02 Datasheet, PDF (1/3 Pages) Mitsubishi Electric Semiconductor – InGaAs AVALANCHE PHOTO DIODES

MITSUBISHI PHOTO DIODES
PD8XX2 SERIES
InGaAs AVALANCHE PHOTO DIODES
PD8042, PD8932, PD893D2
DESCRIPTION
PD8XX2 Series are InGaAs avalanche photodiodes
which has a sensitive area of φ50µm.
PD8XX2 is suitable for receiving the light having
a wavelength band of 1000 to 1600nm.
This photodiode features high-speed response and
a high responsivity, and is suitable for the
light receiving elements for optical fiber
communication systems.
Feature
φ50µm active diameter
1000~1600nm wavelength band
Small dark current
Low noise
High responsivity
APPLICATION
Receiver for optical communication system
ABSOLUTE MAXIMUM RATINGS <*1>
Symbol
Parameter
Conditions
Ratings
Unit
Ir
Reverse current
-
500
µA
If
Forward curent
-
2
mA
Tc
Case temperature
-
-40 ~ +85
C
Tstg
Storage temperature
-
-40 ~ +100
C
Note1: The maximum rating means the limitation over which the device should not be operated
even instant time, and this does not mean the guarantee of its lifetime.
As for the reliability,please refer to the reliability report from Mitsubishi Semiconductor
Quality Assurance Department.
ELECTRICAL / OPTICAL CHARACTERISTICS (Tc=25 C)
Symbol
Parameter
Test conditions
Limits
Unit
Min. Typ. Max.
VBR Break-down voltage Id=100µA
40
60 90
V
Id Dark current
Vr=0.9VBR
-
60 100
nA
R Responsivity
M=1, λ=1300nm
-
0.8
-
A/W
Ct Capacitance
Vr=0.9VBR, f=1MHz
-
0.4 *1 0.9
pF
fc Cut-off frequency M=10, λ=1300nm, RL=50Ω, -3dB
1.0
2.5
-
GHz
*1 Applied to PD8932: Ct=0.5pF(typ.), PD8042: Ct=0.7pF(typ.)
MITSUBISHI ELECTRIC
As of Mar, 2002