PD8XX2 Datasheet, PDF (1/3 Pages) Mitsubishi Electric Semiconductor – InGaAs AVALANCHE PHOTO DIODES

TYPE
NAME
MITSUBISHI LASER DIODES
PD8XX2 SERIES
InGaAs AVALANCHE PHOTO DIODES
PD8042,PD8932
DISCRIPTION
PD8XX2 is an InGaAs avalanche photodiode suitable for
receiving the light having low noise, a wavelength band of
1000 to 1600nm. This photodiode features low noise, a high
quantum efficiency and a very small dark current and is
suitable for the light receiving elements for long-distance
optical communications.
FEATURES
• Active diameter 50µm
• Low noise
• High speed response
• Very small dark current
• High quantum efficiency
APPLICATION
Receiver for long-distance fiber - optic communication systems
ABSOLUTE MAXIMUM RATINGS
Symbol
IR
IF
TC
Tstg
Parameter
Reverse current
Forward current
Case temperature
Storage temperature
Conditions
-
-
-
-
Ratings
Unit
500
µA
2
mA
-40~+85
˚C
-40~+100
˚C
ELECTRICAL /OPTICAL CHARACTERISTICS ^{(TC = 25˚C)}
Symbol
Parameter
V(BR)R
Ct
ID
η
fc
Breakdown voltage
Capacitance
Dark current
Quantum efficiency
Cutoff frequency (-3dB)
∗: Ct=0.6F (typ.) for PD8932
Test conditions
IR = 100 µ A
VR = 0.9V (BR) R,f = 1MHz
VR = 0.9V (BR) R
M = 1, λ = 1300nm
M = 10,RL = 50 Ω ,-3dB
Limits
Unit
Min.
Typ.
Max.
40
60
90
V
-
0.7^∗
0.9
pF
-
60
100
nA
-
80
-
%
1
2.5
-
GHz
SEP.2000