PD839C4 Datasheet, PDF (1/2 Pages) Mitsubishi Electric Semiconductor – InGaAs AVALANCHE PHOTO DIODES

MITSUBISHI PHOTO DIODES
PD839C4
InGaAs AVALANCHE PHOTO DIODES
PD839C4
DESCRIPTION
PD839C4 is a φ35µm InGaAs Avalanche
Photodiodes (APD) with Trans Impedance
Amplifier(TIA).
This APD with TIA features a high-speed response and
low noise, and is suitable for 2.5Gb/s optical
communication systems.
Feature
Buit in TIA
Single 3.3V supply voltage for TIA
Differential output
Ball lens cap
APPLICATION
ABSOLUTE MAXIMUM RATINGS ^{Note 1)}
Receiver for optical communication system
Symbol
Parameter
Conditions
Ratings
Unit
Vpd APD supply voltage
-
VBR
V
Vcc TIA supply voltage
-
6
V
Pin Photo input power
-
0.5
mW
Ipd APD reverse current
-
0.5
mA
Tstg Storage temperature
-
-40 ~ +85
C
Note 1: The maximum rating and limitation over which the device should not be operated instant
time. And this does not mean the guarantee of its lifetime. As for the reliability, please refer
to the reliability report from Mitsubishi Semiconductor Quality Assurance section.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Test conditions
Vcc TIA supply voltage
-
Tc Case temperature
-
Limits
Unit
Min. Typ. Max.
3.0 3.3 5.5
V
-20
- +85 ^C
ELECTRICAL / OPTICAL CHARACTERISTICS (Tc=25 C, Vcc=3.3V, λ=1550nm)
Symbol
Parameter
Test conditions
Limits
Unit
Min Typ Max
VBR Break down voltage
Id=100µΑ
40 60 80
V
R Responsivity
M=10, RL=50Ω, Single-ended 9.5 15 -
kV/W
Icc TIA consumption current Pin=0µW
- 35 70
mA
fc Cut-off frequency
RL=50Ω, -3dB, M=10
1.5 2.0 -
GHz
in
Averaged equivalent input Pin=0µW, f=10MHz-1.4GHz,
noise current density
RL=50Ω
-
9.0
- pA/ Hz^1/2
Pr
Minimum
sensitivity
received NRZ, PBS=2²³-1, BER=10^-10,
2.488G/s, at optimum M
-
-33
-
dBm
MITSUBISHI ELECTRIC
(1/2)
As of July ‘02