PD7XX26 Datasheet, PDF (1/2 Pages) Mitsubishi Electric Semiconductor – InGaAs PIN PHOTO DIODES

PD793D26
MITSUBISHI PHOTO DIODES
PD7XX26 SERIES
InGaAs PIN PHOTO DIODES
DESCRIPTION
PD793D26 Series are InGaAs pin photodiodes
which has a sensitive area of φ 20µm.
PD7XX26 is suitable for receving the light having
a wavelength band of 1000 to 1600nm.
This photodiode features high-speed response and
a high quantum efficiency, and is suitable for the
light receiving elements for optical fiber
communication systems.
Feature
φ20µm active diameter
1000~1600nm wavelength band
Small dark current
High speed response
High quantum efficiency
APPLICATION
Receiver for optical communication system
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Conditions
Ratings
Unit
Vr
Reverse voltage
-
20
V
Ir
Reverse current
-
500
µA
If
Forward curent
-
2
mA
Tc
Case temperature
-
-40 ~ +85
C
Tstg
Storage temperature
-
-40 ~ +100
C
ELECTRICAL / OPTICAL CHARACTERISTICS (Tc=25 C)
Symbol
Parameter
Test conditions
Limits
Unit
Min. Typ. Max.
Ct Capacitance
Vr=5V, f=1MHz
- 0.16 0.30 pF
Id Dark current
Vr=5V
-
0.5 2.0 nA
R Responsivity
Vr=5V, λ=1300nm
0.75 0.85 - A/W
fc Cut-off frequency Vr=5V, λ=1300nm, RL=50Ω , -3dB
8
10
- GHz