PD739C13 Datasheet, PDF (1/2 Pages) Mitsubishi Electric Semiconductor – InGaAs PIN PHOTO DIODES

PD739C13
MITSUBISHI PHOTO DIODES
PD739C13
InGaAs PIN PHOTO DIODES
DESCRIPTION
PD739C13 is a φ20µm InGaAs pin photodiodes
with Trans-Impedance Amplifier (TIA).
This PD with TIA features a high-speed response and
low noise, and is suitable for 2.5Gb/s optical
communication systems.
Feature
Build-in TIA
Single 3.3V supply voltage for TIA
Differential output
Ball lens cap
APPLICATION
ABSOLUTE MAXIMUM RATINGS ^{Note 1)}
Receiver for optical communication system
Symbol
Parameter
Conditions
Ratings
Unit
Vpd PD supply voltage
-
20
V
Vcc TIA supply voltage
-
6
V
Pin Photo input power
-
2.0
mW
Ipd PD reverse current
-
2.0
mA
Tstg Storage temperature
-
-40 ~ +85
C
Note 1: The maximum rating and limitation over which the device should not be operated instant
time. And this does not mean the guarantee of its lifetime. As for the reliability, please refer
to the reliability report from Mitsubishi Semiconductor Quality Assurance section.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Test conditions
Vcc TIA supply voltage
-
Tc Case temperature
-
Limits
Unit
Min. Typ. Max.
3.0 3.3 5.5
V
-20
- +85 ^C
ELECTRICAL / OPTICAL CHARACTERISTICS (Tc=25 C, Vcc=3.3V, Vpd=3.3V ,λ=1300nm)
Symbol
Parameter
Test conditions
Limits
Unit
Min Typ Max
R Responsivity
RL=50Ω, Single-ended
0.75 1.2 -
kV/W
Icc TIA consumption current Pin=0µW
- 35 70
mA
fc Cut-off frequency
RL=50Ω, -3dB, Pin=10µW
1.5 2.0 -
GHz
in
Averaged equivalent input Pin=0µW,
noise current density
RL=50Ω
f=10MHz-1.4GHz, _-
9.0
- pA/ Hz^1/2
Pr
Minimum
sensitivity
received NRZ, PBS=2²³-1, BER=10^-10,
2.488G/s,
-
-23
-
dBm
MITSUBISHI ELECTRIC
(1/2)
As of July ‘02