ML9XX41 Datasheet, PDF (1/2 Pages) Mitsubishi Electric Semiconductor – InGaAsP DFB-LASER DIODE WITH EA MODULATOR

Notice: Some parametric limits are subject to change.
MITSUBISHI LASER DIODES
ML9XX41 SERIES
InGaAsP DFB-LASER DIODE WITH EA MODULATOR
TYPE
NAME
ML9SM41
DESCRIPTION
ML9XX41 series are DFB (Distributed Feedback) laser diodes with a
monolithically integrated EA modulator, suitable light source for 10Gbps
application.
ML9SM41 is supplied with the chip-on-carrier type package.
FEATURES
• Dispersion penalty less than 2dB at 9.95328Gbps, +1600ps/nm
• High extinction ratio (Min. 10dB at 9.95328Gbps)
• High - side mode suppression ratio (Typ. 40dB)
• High speed response (Typ. 30psec)
ABSOLUTE MAXIMUM RATINGS
Symbol
I_F
V_RL
V_EA
Tc
Tstg
Parameter
Forward current (Laser diode)
Reverse voltage (Laser diode)
Reverse voltage (Modulator)
Case temperature
Storage temperature
APPLICATION
10Gbps transmission system
Conditions
CW
-
-
-
-
Ratings
150
2
-3
+25 to +40
-40 to +100
Unit
mA
V
V
degC
degC
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=35degC)
Symbol
Ith
Iop
Vop
λp
θ//
θ⊥
Pm
fc
tr,tf
SMSR
Ex
Pp
Parameter
Threshold current
Operation current
Operating voltage
Peak wavelength
Beam divergence angle (parallel)
Beam divergence angle
(perpendicular)
Monitoring output power
Cut off frequency
Rise and fall time (20%-80%)
Side mode suppression ratio
Extinction ratio
Dispersion penalty
Test Conditions
CW, Vmod=0V
CW, Po=6.5mW, Vmod=0V
CW, Po=6.5mW, Vmod=0V
CW, If=Iop, Vmod=0V
CW, Po=6.5mW, Vmod=0V
CW, Po=6.5mW, Vmod=0V
CW, Po=6.5mW, Vmod=0V
CW, If=Iop, Vmod=-1V
9.95328Gbps, NRZ, PRBS 2²³-1
If=Iop, Vpp=2V,
Voffset=0 to -1.0V
ditto
+1600ps/nm @BER=10-10
Min.
Typ.
Max.
Unit
---
15
30
mA
---
85
100
mA
---
1.6
1.8
V
1530
---
1565
nm
---
30
---
deg.
---
42
---
deg.
---
2.0
---
mW
10
14
---
GHz
---
---
30
psec
35
40
---
dB
10
---
---
dB
---
---
2.0
dB
MITSUBISHI
ELECTRIC
Mar. 2006