ML9XX40 Datasheet, PDF (1/3 Pages) Mitsubishi Electric Semiconductor – 2.5Gbps InGaAsP DFB LASER DIODE

Notice : Some parametric limits are subject to change
MITSUBISHI LASER DIODES
ML9XX40 SERIES
2.5Gbps InGaAsP DFB LASER DIODE
TYPE ML925B40F / ML920J40S
NAME _{ML925J40F / ML920L40S}
DESCRIPTION
ML9XX40 series are uncooled DFB (Distributed Feedback) laser
diodes for 2.5Gbps transmission emitting light beam at 1470~1610nm.
λ/4 shifted grating structure is employed to obtain excellent SMSR
performance under 2.5Gbps modulation. Furthermore, ML9xx40 can
operate in the wide temperature range from 0^oC to 85 ^oC without any
temperature control. They are well suited for light source in long
distance digital transmission application of coarse WDM.
APPLICATION
· 2.5Gbps long-haul transmission
· Coarse WDM application
FEATURES
· λ/4 shifted grating structure
· Wide temperature range operation (0^oC to 85^oC)
· High side-mode-suppression-ratio (typical 45dB)
· High resonance frequency (typical 11GHz)
ABSOLUTE MAXIMUM RATINGS
Symbol
Po
If
V_RL
I_FD
V_RD
Parameter
Output power
Forward current (Laser diode)
Reverse voltage (Laser diode)
Forward current (Photo diode)
Reverse voltage (Photo diode)
Tc
Case temperature
Tstg Storage temperature
Conditions
Ratings
Unit
CW
6
mW
---
150
mA
---
2
V
---
2
mA
---
20
V
---
0 to +85
ºC
---
-40 to +100
ºC
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC)
Symbol
Parameter
Test conditions
Ith Threshold current
CW
CW
<*1>
Tc=85ºC
<*2>
Iop Operation current
CW, Po=5mW
CW, Po=5mW
<*1>
Tc=85ºC
<*2>
Vop Operating voltage
CW, Po=5mW
η Slope efficiency
CW, Po=5mW
CW, Po=5mW <*3>
λp Peak wavelength
CW, Po=5mW
Side mode suppression ratio
SMSR
Side mode suppression ratio(RF)
CW, Po=5mW, Tc=0 to 85ºC
2.48832Gbps,Ib=Ith, Ipp=40mA
θ // Beam divergence angle (parallel) <*6> CW, Po=5mW
θ_┴
(perpendicular) <*6> CW, Po=5mW
fr Resonance frequency
2.48832Gbps,Ib=Ith, Ipp=40mA
tr,tf Rise and Fall time <*7>
2.48832Gbps,Ib=Ith, Ipp=40mA
20%-80%
Im Monitoring output current (PD)
CW, Po=5mW,VRD=1V,RL=10Ω
Id Dark current (PD)
V_RD=5V
Ct Capacitance (PD)
V_RD=5V
<*1> Applied to ML9xx40-04~09 and -12~17.
<*2> Applied to ML9xx40-10~11 and -18~19.
<*3> Applied to ML925J40F and ML920L40S.
<*6> Beam divergence is not applied to ML925J40F and ML920L40S.
<*7> Except influence of the 18mm lead.
Min. Typ. Max.
--- 10 15
--- 35 40
--- 45 50
--- 35 45
--- 70 80
--- 90 100
--- 1.1 1.5
0.17 0.22 ---
0.15 0.20 ---
<*4>,<*5>
35 45 ---
--- 45 ---
--- 25 ---
Unit
mA
mA
V
mW/mA
nm
dB
deg.
--- 30 --- deg.
--- 11 --- GHz
--- 80 120 ps
0.1 --- 1.0 mA
--- --- 0.1 µA
--- 10 20
pF
MITSUBISHI
ELECTRIC
Feb. 2005