ML9XX37 Datasheet, PDF (1/2 Pages) Mitsubishi Electric Semiconductor – High Power InGaAsP DFB LASER DIODE

PRELIMINARY
Notice: Some parametric limits are subject to change
MITSUBISHI LASER DIODES
ML9xx37 SERIES
High Power InGaAsP DFB LASER DIODE
TYPE _{ML99237/ML9SM37}
NAME
DES C RIPTION
ML9xx37 series are high power DFB (Distributed Feedback) laser
diodes for optical transmission emitting light beam at 1550nm.
ML9xx37 achieves 60mW CW operation with stable single
longitudinal mode oscillation and narrow linewidth. ML9xx37 is a
suitable light source for a 10Gbps/40Gbps external modulator.
ABSOLUTE MAXIMUM RATINGS
Symbol
Po
If
VRL
Tsld
Tc
Tstg
Parameter
Optical output power
Laser forward current
Laser reverse voltage
Soldering temperature
Operation temperature
Storage temperature
APPLICATION
CW light source for external modulator
FEATURES
High power operation: 60mW (@25^oC )
High side-mode suppression ratio: 45dB (typ)
Narrow line width: 0.5MHz (typ)
Small size chip-on-carrier
Conditions
CW
-
-
1 minute
-
-
Ratings
80
450
2
320
+15~ +35
-40 ~+100
Unit
mW
mA
V
o_C
o_C
o_C
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25^oC)
Symbol
Parameter
Conditions
Ith Threshold current
Iop Operation current
Vop Operating voltage
η
Slope efficiency
λ p Peak wavelength
CW
CW,Po=60 mW
CW,Po=60 mW
CW,Po=60 mW
CW,Po=60 mW
SMSR
θ
θ⊥
∆f
RIN
Side mode suppression ratio CW,Po=60 mW
Beam divergence angle (parallel) CW,Po=60 mW
(perpendicular) CW,Po=60 mW
Linewidth
CW,Po=60 mW
Relative Intensity Noise
CW,Po=60 mW,0.5~10GHz
Min.
-
-
-
0.30
1530
35
-
-
-
-
Limits
Typ.
20
200
1.8
0.35
1550
45
20
25
0.5
-
Max .
35
300
2.5
-
1565
-
40
45
1.0
-145
Unit
mA
mA
V
mW/mA
nm
dB
deg.
deg.
MHz
dB/Hz
MITSUBISHI
ELECTRIC
Feb. 2003