ML9XX18 Datasheet, PDF (1/1 Pages) Mitsubishi Electric Semiconductor – InGaAsP MQW-DFB LASER DIODE WITH EA MODULATOR

MITSUBISHI LASER DIODES
ML9XX18 SERIES
InGaAsP MQW-DFB LASER DIODE WITH EA MODULATOR
TYPE
NAME
ML9XX18
DESCRIPTION
ML9XX18 series are DFB (Distributed Feedback) laser
diodes with a monolithcally integrated EA (Electro-Absorption) modulator
emitting light beam at 1550nm.
The laser is suitable to a light source for use in 10Gbps long-haul
transmission over 50km.
FEATURES
DFB laser diode integrated with EA
(Electro-Absorption) modulator
10Gbps long-haul transmission over 50km
High side-mode-suppression-ratio (typical 40dB)
High extinction ratio
Wavelengths in range from 1530nm to 1564nm
are available for WDM application
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
IF
Laser forward current
VRL
Laser reverse voltage
VEA
Modulator voltage
Tc
Case temperature
Tstg
Storage temperature
APPLICATION
10Gbps trunk-line systems
Conditions
CW
-
-
-
-
Ratings
200
2
-3
+ 15 - +35
- 40 -+100
Unit
mA
V
V
deg.C
deg.C
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25deg.C)
Symbol
Parameter
Test conditions
Ith
Iop
Vop
Wp
FFPh
FFPv
Thereshold current
Operation current
Operating voltage
Peak wavelength
Beam divergence angle (parallel)
Beam divergence angle
(perpendicular)
CW,Vmod=0V
CW,Po=5mW,Vmod=0V
CW,Po=5mW,Vmod=0V
CW,Po=5mW,Vmod=0V
CW,Po=5mW,Vmod=0V
CW,Po=5mW,Vmod=0V
Pm
Monitoring output
CW,Po=5mW,Vmod=0V
fc
Cutoff frequency (-3dB)
CW,Po=5mW,Vmod=-1V
tr,tf
SMSR
Ex
Rise and fall time(10%-90%)
Side mode suppression ratio
Extinction Ratio
9.95328Gb/s,NRZ,PRBS2²³-1
If=Iop
Vpp=0 - 2.5V
Pp
Power penalty
ditto
SMF 50km (D=800ps/nm)
@BER = 10 ^-10
Min.
-
-
-
1530
-
-
-
10
-
35
10
-
Typ.
10
70
1.2
-
30
45
1.0
14
-
40
12
1.0
Max
30
100
2.0
1564
-
-
-
-
40
-
-
-
Unit
mA
mA
V
nm
deg.
deg.
mW
GHz
psec
dB
dB
dB
MITSUBISHI
ELECTRIC