ML9XX17 Datasheet, PDF (1/1 Pages) Mitsubishi Electric Semiconductor – InGaAsP MQW-DFB LASER DIODE WITH EA MODULATOR

PRELIMINARY
Notice : This is not a final
sSpoemceificpaatriaomn _{etric limits are subject to change.}
MITSUBISHI LASER DIODES
ML9XX17 SERIES
InGaAsP MQW-DFB LASER DIODE WITH EA MODULATOR
TYPE
NAME
ML9XX17
DESCRIPTION
ML9XX17 series are DFB (Distributed Feedback) laser
diodes with a monolithcally integrated EA (Electro-Absorption)
modulator emitting light beam at 1550nm.
The laser is suitable to a light source for use in ultra-long-haul
transmission over 700km.
FEATURES
DFB laser diode integrated with EA
(Electro-Absorption) modulator
2.5Gb/s long-haul transmission over 700km
High side-mode-suppression-ratio (typical 40dB)
High extinction ratio
Optional wavelength in range of 1545nm to 1560nm
is available
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
IF
Laser forward current
VRL
Laser reverse voltage
VEA
Modulator voltage
Tc
Case temperature
Tstg
Storage temperature
APPLICATION
2.5Gb/s trunk-line systems
Conditions
CW
-
-
-
-
Ratings
200
2
0 - -3
+ 15 - +35
- 40 -+100
Unit
mA
V
V
deg.C
deg.C
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25deg.C)
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
Ith
Iop
Vop
Wp
FFPh
FFPv
Pm
fc
Thereshold current
CW,Vmod=0V
Operation current
CW,Po=5mW,Vmod=0V
Operating voltage
CW,Po=5mW,Vmod=0V
Peak wavelength
CW,Po=5mW,Vmod=0V
Beam divergence angle (parallel) CW,Po=5mW,Vmod=0V
Beam divergence angle
(perpendicular)
CW,Po=5mW,Vmod=0V
Monitoring output
CW,Po=5mW,Vmod=0V
Cutoff frequency (-3dB)
CW,Po=5mW,Vmod=-1V
-
10
30
mA
-
80
150
mA
-
1.5
2.0
V
-
1550
-
nm
-
30
-
deg.
-
-
-
45
-
deg.
-
1.0
-
mW
4.0
6.0
-
GHz
Ex
Extinction Ratio
CW,Po=5mW,Vmod=-2.5V
10
15
-
dB
tr,tf
Rise and fall time(10%-90%) _{2.48832Gb/s,NRZ,PRBS2}²³_-1
-
SMSR
Side mode suppression ratio ^If=Iop
35
Vpp=0 - 2.5V
dW
Wavelength Excursion
-
-
120
psec
40
-
dB
0.01
-
nm
Pp
Power penalty
ditto
-
1.0
-
dB
SMF 700km (D=12000ps/nm)
@BER = 10 ^-10
MITSUBISHI
ELECTRIC
as of Oct 1998