ML9XX16 Datasheet, PDF (1/3 Pages) Mitsubishi Electric Semiconductor – InGaAsP DFB LASER DIODES

MITSUBISHI LASER DIODES
ML9XX11,ML9XX16,ML9XX22 SERIES
Notice : Some parametric limits are subject to change
InGaAsP DFB LASER DIODES
TYPE
NAME
ML925B11F / ML925B16F / ML925B22F
ML920J11S / ML920J16S / ML920J22S
ML925J11F / ML925J16F / ML925J22F
ML920L11S / ML920L16S / ML920L22S
DESCRIPTION
ML9XX11, ML9XX16 and ML9XX22 series are DFB
(Distributed Feedback) laser diodes emitting light
beam with emission wavelength of 1470 ~ 1610 nm.
They are well suited for light source in long
distance digital transmission application of coarse
WDM.
They are hermetically sealed devices with the photo
diode for optical output monitoring.
APPLICATION
·~1.25Gbps digital transmission system
· Coarse WDM application
FEATURES
· Homogeneous grating (AR/HR facet coating) structure
DFB
· Wide temperature range operation ( 0 to 85ºC )
· Low threshold current (typical 8mA)
· High speed response (typical 0.1nsec)
· 8 wavelength with 20nm space at 1470 ~ 1610nm
· φ5.6mm TO-CAN package
· Flat window cap, or Aspherical lens cap
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Po
Light output power
If
Forward current (Laser diode)
V_RL
Reverse voltage (Laser diode)
V_RD
Reverse voltage (Photo diode)
I_FD
Forward current (Photo diode)
Tc
Case temperature
Tstg
Storage temperature
Conditions
Ratings
Unit
CW
10
mW
---
150
mA
---
2
V
---
20
V
---
2
mA
---
0 to +85
ºC
---
-40 to +100
ºC
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC otherwise specified)
[ Flat window cap ; ML925B11F/ML925B16F/ML925B22F/ ML920J11S/ML920J16S/ML920J22S ]
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ith
Threshold current
CW
CW, Tc=85ºC
---
8
---
30
15
50
mA
Iop
Operation current
CW, Po=5mW
---
CW, Po=5mW, Tc=85ºC
---
25
60
40
80
mA
Vop
Operating voltage
CW, Po=5mW
---
1.1
1.5
V
η
Slope efficiency
CW, Po=5mW
0.20 0.28
--- mW/mA
λp
Peak wavelength
CW, Po=5mW
<**>
nm
θ //
Beam divergence angle (parallel) CW, Po=5mW
---
25
35
deg.
Beam divergence angle
θ_┴
(perpendicular)
CW, Po=5mW
---
35
45
deg.
SMSR Side mode suppression ratio
CW, Po=5mW
Tc= 0 to +85ºC
35
40
---
dB
tr,tf
Rise and Fall time
Ib=Ith, 20-80% <*>
---
0.1
0.2
ns
Im
Monitoring output current (PD) CW, Po=5mW
0.05
0.2
---
mA
Id
Dark current (PD)
Ct
Capacitance (PD)
V_RD=5V
V_RD=5V
---
---
0.1
µA
---
10
20
pF
<*> Except influence of the 18mm lead.
MITSUBISHI
ELECTRIC
Dec. 2004