ML9XX11_04 Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – Notice : Some parametric limits are subject to change InGaAsP DFB LASER DIODES

Notice : Some parametric limits are subject to change
MITSUBISHI LASER DIODES
ML9XX11 SERIES
InGaAsP DFB LASER DIODES
TYPE ^{ML925B11F / ML920J11S}
NAME ML925AA11F / ML920AA11S
ML925J11F / ML920L11S
DESCRIPTION
ML9XX11series are DFB (Distributed Feedback) laser
diodes emitting light beam around 1550nm.
They are well suited for light source in long
distance digital transmission system.
They are hermetically sealed devices with the photo
diode for optical output monitoring.
APPLICATION
· ~1.25Gbps digital transmission system
FEATURES
· Homogeneous grating (AR/HR facet coating) structure
DFB
· Wide temperature range operation ( -40 to 85ºC )
· Low threshold current (typical 8mA)
· High speed response (typical 0.1nsec)
· φ5.6mm TO-CAN package
· Flat window cap, Ball lens cap, or Aspherical lens cap
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Po
Light output power
If
Forward current (Laser diode)
V_RL
Reverse voltage (Laser diode)
V_RD
Reverse voltage (Photo diode)
I_FD
Forward current (Photo diode)
Tc
Case temperature
Tstg
Storage temperature
Conditions
Ratings
Unit
CW
10
mW
---
150
mA
---
2
V
---
20
V
---
2
mA
---
-40 to +85
ºC
---
-40 to +100
ºC
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC otherwise specified)
[ Flat window cap ; ML925B11F / ML920J11S ]
Symbol
Ith
Iop
Vop
η
λp
θ //
θ_┴
SMSR
tr,tf
Im
Id
Ct
Parameter
Threshold current
Operation current
Operating voltage
Slope efficiency
Peak wavelength
Beam divergence angle (parallel)
Beam divergence angle
(perpendicular)
Side mode suppression ratio
Rise and Fall time
Monitoring output current (PD)
Dark current (PD)
Capacitance (PD)
Test conditions
CW
CW, Tc=85ºC
CW, Po=5mW
CW, Po=5mW, Tc=85ºC
CW, Po=5mW
CW, Po=5mW
CW, Po=5mW
CW, Po=5mW
Min.
---
---
---
---
---
0.20
1530
---
Typ.
8
30
25
60
1.1
0.28
1550
25
Max.
15
50
40
80
1.5
---
1570
35
Unit
mA
mA
V
mW/mA
nm
deg.
CW, Po=5mW
---
35
45
deg.
CW, Po=5mW
Tc= - 40 to +85ºC
35
40
---
dB
Ib=Ith, 20-80% <*>
---
0.1
0.2
ns
CW, Po=5mW
0.05
0.2
---
mA
V_RD=5V
---
---
0.1
µA
V_RD=5V
---
10
20
pF
<*> Except influence of the 18mm lead.
MITSUBISHI
ELECTRIC
Dec. 2004