ML7XX32 Datasheet, PDF (1/2 Pages) Mitsubishi Electric Semiconductor – 10Gbps InGaAsP DFB LASER DIODE

Notice: Some parametric limits are subject to change
MITSUBISHI LASER DIODES
ML7xx32 SERIES
10Gbps InGaAsP DFB LASER DIODE
TYPE _{ML792E32/ML792H32}
NAME
DES C RIPTIO N
APPLICATION
ML7xx32 series are uncooled DFB (Distributed Feedback) laser
10Gbps Ethernet/Short Reach
diodes for 10Gbps transmission emitting light beam at 1310nm.
λ /4 phase shifted grating structure is employed to obtain excellent _{***S pecification Note}
SMSR performance under 10Gbps modulation. Furthermore, ML7xx32
is able to operate in the wide temperature range from 0^oC to 85^oC
Type
Matching Resistance :Rs
without temperature control.
FEATURES
ML792E32-01
ML792H32-01
42 ± 1 ohm
λ /4 phase shifted grating structure
Wide temperature range operation ( 0 ^oC to 85^oC )
High side-mode-suppression-ratio (typical 45dB)
High resonance frequency (typical 15GHz)
Chip-on-carrier
ABSOLUTE MAXIMUM RATINGS
Symbol
If
P arameter
Laser forward current
VRL
Tc
Ts t g
Laser reverse voltage
Operation temperature
Storage temperature
Conditions
-
-
-
-
Ratings
120
2
0 ~ +85
-40 ~+100
Unit
mA
V
o_C
o_C
ELECTRICAL/OPTICAL CHARACTERISTICS ^(Tc=25oC)
Symbol
P arameter
Conditions
Ith
Iop
Vop
η
λp
SMSR
θ
θ⊥
fr
tr
tf
Threshold current
CW
CW,Tc=85^oC
Operation current
Operating voltage
Slope efficiency
CW,Po=5mW
CW,Po=5mW,Tc=85^oC
CW,Po=5mW
CW,Po=5mW
Peak wavelength
Side mode suppression ratio
CW,Po=5mW,Tc= 0 ^oC ~ +85^oC
CW,Po=5mW,Tc= 0 ^oC ~ +85^oC
Beam divergence angle (parallel) CW,Po=5mW
(perpendicular) CW,Po=5mW
Resonance frequency
Rise time(20%-80%)
Fall time(20%-80%)
10Gbps, Ex=7dB, Vpp=2.0V
10Gbps, Ex=7dB, Vpp=2.0V
4th order Bessel - Thompson Filter
Min.
-
-
-
-
-
0.20
1290
35
-
-
-
-
-
Limits
Typ.
9
30
30
70
1.1
0.25
1310
45
25
30
15
30
30
Max .
20
40
40
90
1. 8
-
1330
-
40
45
-
40
40
Unit
mA
mA
mA
mA
V
mW/mA
nm
dB
d eg.
d eg.
GHz
psec
MITSUBISHI
ELECTRIC
Mar. 2003