ML7XX16 Datasheet, PDF (1/2 Pages) Mitsubishi Electric Semiconductor – 2.5Gbps InGaAsP DFB LASER DIODE

MITSUBISHI LASER DIODES
ML7xx16 SERIES
2.5Gbps InGaAsP DFB LASER DIODE
TYPE
NAME
ML725B16F
DESCRIPTION
ML7xx16 series are uncooled DFB (Distributed Feedback) laser
diodes for 2.5Gbps transmission emitting light beam at 1310nm.
/4 shifted grating structure is employed to obtain excellent SMSR
performance under 2.5Gbps modulation. Furthermore, ML7xx16 can
operate in the wide temperature range form -20ºC to 85ºC without any
temperature control.
FEATURES
/4 phase shifted grating structure
Wide temperature range operation
(-20ºC to 85ºC )
High side-mode-suppression-ratio (typical 45dB)
High resonance frequency (typical 11GHz)
ABSOLUTE MAXIMUM RATINGS
APPLICATION
2.5Gbps transmission
Symbol
Po
IF
VRL
IRD
VRD
Tc
Tstg
Parameter
Output power
Laser forward current
Laser reverse voltage
PD forward current
PD reverse voltage
Operation temperature
Storage temperature
Conditions
CW
Ratings
Unit
6
mW
-
200
mA
-
2
V
-
2
mA
-
20
V
-
-20 ~ +85
ºC
-
-40 ~+100
ºC
ELECTRICAL/OPTICAL CHARACTERISTICS Tc=25ºC
Symbol
Parameter
Conditions
Ith Threshold current
CW
CW,Tc=85ºC
Iop Operation current
Vop ^{Operating voltage}
Slope efficiency
p Peak wavelength
SMSR ^{Side mode suppression ratio}
CW,Po=5mW
CW,Po=5mW,Tc=85ºC
CW,Po=5mW
CW,Po=5mW
CW,Po=5mW,Tc=-20ºC +85ºC
CW,Po=5mW,Tc=-20ºC +85ºC
Beam divergence angle (parallel) CW,Po=5mW
(perpendicular) CW,Po=5mW
fr Resonance frequency
2.48832Gbps, Ibias=Ith,Ipp=40mA
tr,tf Rise and fall time(10%-90%)
2.48832Gbps, Ibias=Ith,Ipp=40mA
not including package
Im Monitoring current (PD)
Id Dark current (PD)
Ct Capacitance (PD)
CW,Po=5mW,VRD=1V
VRD=5V
VRD=5V,f=1MHz
Min.
-
-
-
-
-
0.18
1290
35
-
-
-
-
Limits
Typ.
10
35
30
75
1.1
0.25
1310
45
25
30
11
100
0.1
-
-
-
-
10
Max.
15
50
40
100
1.8
-
1330
-
40
47
-
150
Unit
mA
mA
mA
mA
V
mW/mA
nm
dB
deg.
deg.
GHz
psec
2.0
mA
1.0
A
20
pF
MITSUBISHI
ELECTRIC