English
Language : 

ML520G51 Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – LASER DIODES FOR DISPLAY SYSTEM
MITSUBISHI LASER DIODES
ML5xx51 LD SERIES
FOR DISPLAY SYSTEM
TYPE
NAME
ML520G51
Please note that this data sheet may be changed without any notice.
DESCRIPTION
Mitsubishi ML520G51 is a high-power, high-
efficient semiconductor laser diode which provides
emission wavelength of 638 nm and standard light
output of 150mW.
This LD has broad-stripe structure which enables
high output power.
FEATURES
• High Output Power: 150mW (CW)
• High Efficiency: 1.0mW/mA (typ.)
• Visible Light: 638nm (typ.)
• φ5.6mm TO-CAN PKG
APPLICATION
• Display system, Bio-medical
ABSOLUTE MAXIMUM RATINGS (Note 1)
Symbol
Parameter
Conditions
Ratings
Unit
Po
Light output power
CW
150
mW
VRL
Reverse voltage
-
2
V
Tc
Case temperature
-
-5 ~ +55
°C
Tstg
Storage temperature
-
-40 ~ +100
°C
Note1: The maximum rating means the limitation over which the laser should not be operated even instant time.
This does not mean the guarantee of its lifetime. As for the reliability, please refer to the reliability report issued
by Quality Assurance Section, HF & Optical Semiconductor Division, Mitsubishi Electric Corporation.
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25°C)
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Ith
Threshold current
CW
80
130
180
Iop
Operating current
CW, Po=150mW
200
260
330
Vop
Operating voltage
CW, Po=150mW
1.8
2.1
2.5
η
Slope efficiency
CW, Po=150mW
0.8
1.0
1.3
λp
Peak wavelength
CW, Po=150mW
632
638
644
θ//
Beam divergence angle
(parallel)
CW, Po=150mW
1
7
13
θ⊥
Beam divergence angle
(perpendicular)
CW, Po=150mW
25
35
45
Unit
mA
mA
V
mW/mA
nm
°
°
MITSUBISHI
ELECTRIC
( 1/ 4 )