ML501P73 Datasheet, PDF (1/5 Pages) Mitsubishi Electric Semiconductor – ML5xx73 LD SERIES

TYPE
NAME
LASER DIODES
ML5xx73 LD SERIES
FOR DISPLAY SYSTEM
ML501P73
DESCRIPTION
Mitsubishi ML501P73 is a high-power, highly
efficient semiconductor laser diode which provides
emission wavelength of 638 nm and standard light
output of 1.0W (pulse) and 0.5W (CW).
This LD has broad-stripe structure which enables
high output power.
FEATURES
• High Output Power: 1.0W (Pulse)
0.5W (CW)
• High Efficiency: 1.0mW/mA (typ.)
• Visible Light: 638nm (typ.)
• φ5.6mm Capless PKG
APPLICATION
• Display system, Bio-medical
ABSOLUTE MAXIMUM RATINGS (Note 1)
Symbol
Parameter
Conditions
Ratings
Unit
CW
0.5
W
Po
Light output power
Pulse Duty≤33%,
frequency≥50Hz
1.0
W
VRL
Reverse voltage
-
2
V
Tc
Case temperature
-
-5 ~ +40
°C
Tstg
Storage temperature
-
-40 ~ +100
°C
Note1: The maximum rating means the limitation over which the laser should not be operated even instant time.
This does not mean the guarantee of its lifetime. As for the reliability, please refer to the reliability report issued
by Quality Assurance Section, HF & Optical Semiconductor Division, Mitsubishi Electric Corporation.
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25°C)
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Ith
Threshold current
CW
90
170
210
Iop
Operating current
CW, Po=0.5W
500
650
800
Vop
Operating voltage
CW, Po=0.5W
1.9
2.2
2.6
η
Slope efficiency
CW, Po=0.5W
0.8
1.0
1.4
λp
Peak wavelength
CW, Po=0.5W
632
638
644
θ//
Beam divergence angle
(parallel)
CW, Po=0.5W
1
7.5
15
θ⊥
Beam divergence angle
(perpendicular)
CW, Po=0.5W
25
35
45
Unit
mA
mA
V
mW/mA
nm
°
°
Specifications are subject to change without notice.
TLDE-P1245
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