ML4XX26 Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – FOR OPTICAL INFORMATION SYSTEMS

MITSUBISHI LASER DIODES
ML4XX26 SERIES
FOR OPTICAL INFORMATION SYSTEMS
TYPE ^ML40126N
NAME ML44126N,ML44126R
FEATURES
ML4xx26 series is AlGaAs laser diodes which
provide a stable, single transverse mode ocillation
with emission wavelength of 785nm and standard
continuous light output of 5mW.
ML4xx26 are hermetically sealed devices having
the photodiode for optical output monitoring.
ML4xx26 is produced by the MOCVD crystal
growth method which is excellent in mass production
and characteristics uniformity.
FEATURES
• Output 5mW(CW)
• Built-in monitor photodiode
• Low droop
APPLICATION
• Laser Beam Printing, Digital Copy
ABSOLUTE MAXIMUM RATINGS (Note 1)
Symbol
Parameter
Po
Light output power
Conditions
CW
Ratings
Unit
8
mW
VRL
Reverse voltage (laser diode)
-
2
V
VRD
Reverse voltage (Photodiode)
-
30
V
IFD
Forward current (Photodiode)
Tc
Case temperature
Tstg
Storage temperature
-
10
mA
-
-40~ +60
°C
-
-40~ +100
°C
Note1: The maximum rating means the limitation over which the laser should not be operated even instant time,
and this does not mean the guarantee of its lifetime.As for the reliability,please refer to the reliability report from Mitsubishi
Semiconductor Quality Assurance Department.
ELECTRICAL / OPTICAL CHARACTERISTICS (Tc=25°C)
Symbol
Ith
Iop
η
Vop
λp
θ//
θ⊥
Im
Im(Note2)
ID
Ct
D
Parameter
Threshold current
Operation current
Slope efficiency
Operating voltage
Peak wavelength
Beam divergence angle
(parallel)
Beam divergence angle
(perpendicular)
Monitoring output current
(Photodiode)
Dark current (Photodiode)
Capacitance (Photodiode)
Droop
Test conditions
CW
CW,Po=5mW
CW,Po=5mW
CW,Po=5mW
CW,Po=5mW
CW,Po=5mW
CW,Po=5mW
CW,Po=5mW, VRD=1V
RL=10Ω(Note3)
VRD=10V
VRD=5V, f=1MHz
CW,Po=3mW
Note 2: Applicable to ML44126R and ML44126N
Note 3: RL=the load resistance of photodiode
MITSUBISHI
ELECTRIC
(1/4)
MIn
Typ.
Max
Unit
-
25
40
mA
-
40
70
mA
0.25
0.35
0.45 mW/mA
-
2
2.5
V
770
785
800
nm
8
11
15
°
22
29
36
°
-
0.45
-
mA
-
0.90
-
-
-
0.5
µA
-
7
-
pF
-
6
-
%
as of February '00