English
Language : 

ML320G2-11 Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – LASER DIODES FOR INDUSTRIAL SYSTEMS
MITSUBISHI LASER DIODES
ML3xx2 LD SERIES
FOR INDUSTRIAL SYSTEMS
TYPE
NAME
ML320G2-11 / ML329G2-11
Please note that this data sheet may be changed without any notice.
DESCRIPTION
ML3XX2 is a high-power, high-efficient blue-violet
semiconductor laser which provides a stable, single
transverse mode oscillation with emission wavelength of
405nm and standard light output of 120mW(CW).
FEATURES
• High Output Power: 120mW (CW)
• High Efficiency: 1.7mW/mA (typ.)
• Visible Light: 405nm (typ.)
• Package: φ5.6mm TO-CAN PKG (ML320G2)
φ3.8mm TO-CAN PKG (ML329G2)
APPLICATION
• Industrial , Bio-medical systems
ABSOLUTE MAXIMUM RATINGS (Note 1)
Symbol
Parameter
Conditions
Ratings
Unit
Po
Light output power
CW
120
mW
VRL
Reverse voltage
-
2
V
Tc
Case temperature
-
+5 ~ +80
°C
Tstg
Storage temperature
-
-40 ~ +100
°C
Note1: The maximum rating means the limitation over which the laser should not be operated even instant time.
This does not mean the guarantee of its lifetime. Additionally, LD lifetime is strongly dependent on the case
temperature. As for the reliability, please refer to the reliability report issued by Quality Assurance Section, HF &
Optical Semiconductor Division, Mitsubishi Electric Corporation.
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25°C)
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Ith
Threshold current
CW
-
45
70
Iop
Operating current
CW, Po=120mW
-
120
160
Vop
Operating voltage
CW, Po=120mW
-
5.0
6.0
η
Slope efficiency
CW, Po=120mW
1.3
1.7
2.0
λp
Peak wavelength
CW, Po=120mW
400
405
410
θ//
Beam divergence angle
(parallel)
CW, Po=120mW
6
8
12
θ⊥
Beam divergence angle
(perpendicular)
CW, Po=120mW
15
17
21
Unit
mA
mA
V
mW/mA
nm
°
°
MITSUBISHI
ELECTRIC
( 1/ 4 )
As of Oct. 2009