ML1XX8 Datasheet, PDF (1/3 Pages) Mitsubishi Electric Semiconductor – FOR OPTICAL INFORMATION SYSTEMS

TYPE
NAME
MITSUBISHI LASER DIODES
ML1XX8 SERIES
FOR OPTICAL INFORMATION SYSTEMS
ML101J8, ML120G8
DESCRIPTION
ML1XX8 is a high power AlGaInP semiconductor laser
which provides a stable, single transverse mode oscillation
with emission wavelength of 660-nm and standard CW light
output of 40mW.
ML1XX8 has a window-mirror-facet which improves the
maximum output power. That leads to highly reliable and
high-power operation.
FEATURES
• High Output Power: 40mW (CW) , 60mW (Pulse)
• Visible Light: 660nm (typ.)
APPLICATION
High-Density Optical Disc Drives
DVD(Digital Versatile Disc)-RAM Drive
ABSOLUTE MAXIMUM RATINGS Note 1)
Symbol
Po
VRL
Parameter
Light output power
Reverse voltage
Conditions
Ratings
Unit
CW
45
mW
Pulse(Note 2)
60
-
2
V
Tc
Case temperature
-
- 10 ~ +60
°C
Tstg
Storage temperature
-
- 40 ~ +100
°C
Note1: The maximum rating means the limitation over which the laser should not be operated even instant time, and this does
not mean the guarantee of its lifetime. As for the reliability,please refer to the reliability report from Mitsubishi Semiconductor
Quality Assurance Department.
Note2: TARGET SPEC /Condition Duty less than 50%,pulse width less than 0.1µs
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25°C)
Symbol
Ith
Iop
Vop
η
λp
θ//
θ⊥
Parameter
Threshold current
Operating current
Operating voltage
Slope efficiency
Peak wavelength
Beam divergence angle
(parallel)
Beam divergence angle
(perpendicular)
Test conditions
CW
CW,Po=40mW
CW,Po=40mW
CW,Po=40mW
CW,Po=40mW
CW,Po=40mW
CW,Po=40mW
Min.
Typ.
Max
Unit
-
57
-
mA
-
117
-
mA
-
2.5
3.0
V
-
0.67
-
mW/mA
655
660
666
nm
-
8.5
-
°
-
22
-
°
MITSUBISHI
ELECTRIC
(1/3)
as of December '99