MIG100Q6CMB1X Datasheet, PDF (1/10 Pages) Toshiba Semiconductor – TOSHIBA Intelligent Power Module Silicon N Channel IGBT

MIG100Q6CMB1X
MITSUBISHI SEMICONDUCTOR <Intelligent Power Module>
MIG100Q6CMB1X (1200V/100A 6in1)
High Power Switching Applications
Motor Control Applications
• Integrates inverter power circuits and control circuits (IGBT drive units, protection units for short-circuit
current, over current, under voltage and over temperature) in one package.
• The electrodes are isolated from case.
• VCE (sat) = 2.4 V (typ.)
• UL recognized File No. E87989
• Weight: 385 g (typ.)
Equivalent Circuit
20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1
FO IN V_D GND
FO IN V_D GND
FO IN V_D GND
GND V_S OUT
GND V_S OUT
GND V_S OUT
GND IN FO V_D GND IN FO V_D GND IN FO V_D
GND V_S OUT GND V_S OUT GND V_S OUT
W
V
U
N
P
1. V_D (U) 2.
8. GND (V) 9.
15. Open 16.
FO (U)
V_D (W)
Open
3. IN (U) 4. GND (U) 5. V_D (V) 6. FO (V) 7.
10. FO (W) 11. IN (W) 12. GND (W) 13. V_D (L) 14.
17. IN (X) 18. IN (Y) 19. IN (Z) 20. GND (L)
IN (V)
FO (L)
2004-10-01 1/10