MH64D64AKQH-75 Datasheet, PDF (1/40 Pages) Mitsubishi Electric Semiconductor – 4,294,967,296-BIT (67,108,864-WORD BY 64-BIT) Double Data Rate Synchronous DRAM Module

Preliminary Spec.
MITSUBISHI LSIs
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MH64D64AKQH-75,-10
4,294,967,296-BIT (67,108,864-WORD BY 64-BIT) Double Data Rate Synchronous DRAM Module
DESCRIPTION
The MH64D64AKQH is 67108864 - word x 64-bit Double
Data Rate(DDR) Sy nchronous DRAM mounted module.
This consists of 16 industry standard 32M x 8 DDR
Sy nchronous DRAMs in Small TSOP with SSTL_2 interf ace
which achiev es v ery high speed data rate up to 133MHz.
This socket-ty pe memory m odule is suitable f or main
memory in computer systems and easy to interchange or
add modules.
FEATURES
Type name
Max.
Frequency
MH64D64AKQH-75
MH64D64AKQH-10
133MHz
100MHz
CLK
Access Time
[component level]
+ 0.75ns
+ 0.8ns
- Utilizes industry standard 32M X 8 DDR Synchronous DRAMs
in Smal TSOP package , industry standard EEPROM(SPD) in
TSSOP package
- 200pin SO-DIMM
- Vdd=Vddq=2.5v ±0.2V
- Double data rate architecture; two data transf ers per
clock cy c le
- Bidirectional, data strobe (DQS) is transmitted/receiv ed
with data
- Dif f erential clock inputs (CLK and /CLK)
- DLL aligns DQ and DQS transitions with CLK transition edges of DQS
- Commands entered on each positiv e CLK edge
- Data and data mask ref erenced to both edges of DQS
- 4bank operation concontrolled by BA0,BA1(Bank Address
,discrete)
- /CAS latency - 2.0/2.5 (programmable)
- Burst length- 2/4/8 (programmable)
- Burst Ty pe - sequential/interleav e(programmable)
- Auto precharge / All bank precharge controlled by A10
- 8192 ref resh cy c les /64ms
- Auto ref resh and Self ref resh
- Row address A0-12 / Column address A0-9
- SSTL_2 Interf ace
- Module 2bank Conf igration
APPLICATION
Main memory unit for Note PC, Mobile etc.
PCB Outline
(Front)
1
199
(Back)
2
200
MIT-DS-0418-0.1
MITSUBISHI
ELECTRIC
17.May.2001
1