MH4M36CJD-5 Datasheet, PDF (1/14 Pages) Mitsubishi Electric Semiconductor – FAST PAGE MODE ( 4194304-WORD BY 36-BIT ) DYNAMIC RAM

MITSUBISHI LSIs
MH4M36CJD-5,-6,-7
FAST PAGE MODE ( 4194304-WORD BY 36-BIT ) DYNAMIC RAM
DESCRIPTION
The MH4M36CJD is an 4M word by 36-bit dynamic
RAM module and consists of 8 industry standard
4M X 4 dynamic RAMs in TSOP and 4 industry
standard 4M X 1 dynamic RAMs in TSOP.
The ICs are mounted on both sides of small
ceracom PC boards and form a convenient 64-pin
WDIP package.
FEATURES
Type name
MH4M36CJD-5
MH4M36CJD-6
MH4M36CJD-7
RAS
CAS Address OE
Cycle Power
access access access access
dissipa-
time
time time
time
time
tion
(max.ns) (max.ns) (max.ns) (max.ns) (min.ns) (typ.mW)
50
13
25
13
90 7240
60
15
30
15
110 5920
70
20
35
20
130 5200
Utilizes industry standard 4M X 4 DRAMs in TSOP package
and 4M X 1 DRAMs in TSOP package
Single 5V ± 10%supply
Low stand-by power dissipation
66mW (Max) . . . . . . . . . . . . . . . . . . . CMOS lnput level
Low operating power dissipation
MH4M36CJD - 5 . . . . . . . . . . . . . . . . . 9.15W (Max)
MH4M36CJD - 6 . . . . . . . . . . . . . . . . . 7.48W (Max)
MH4M36CJD - 7 . . . . . . . . . . . . . . . . . 6.51W (Max)
All inputs, output TTL compatible and low capacitance
2048 refresh cycles every 32ms (A0 ~ A10)
Includes 12 0.22uF decoupling capacitors
APPLICATION
Main memory unit for computers, Microcomputer memory,
Refresh memory for CRT
PIN CONFIGURATION ( TOP VIEW )
DQ0 1
DQ1 2
DQ2 3
DQ3 4
DQ4 5
DQ5 6
Vss 7
DQ6 8
DQ7 9
DQP0 10
/CAS0 11
DQ8 12
DQ9 13
Vcc 14
DQ10 15
DQ11 16
DQ12 17
DQ13 18
DQ14 19
DQ15 20
Vss 21
DQP1 22
/CAS1 23
A0 24
A1 25
A2 26
A3 27
Vcc 28
A4 29
A5 30
A6 31
A7 32
64 DQ16
63 DQ17
62 DQ18
61 DQ19
60 Vcc
59 DQ20
58 DQ21
57 DQ22
56 DQ23
55 DQP2
54 /CAS2
53 Vss
52 DQ24
51 DQ25
50 DQ26
49 DQ27
48 DQ28
47 DQ29
46 Vcc
45 DQ30
44 DQ31
43 DQP3
42 /CAS3
41 /RAS0
40 RFU
39 Vss
38 /W
37 RFU
36 RFU
35 A10
34 A9
33 A8
MIT-DS-0035-0.0
MITSUBISHI
ELECTRIC
( 1 / 14 )
Jun/17/1996