MH32S72BAFA-7 Datasheet, PDF (1/54 Pages) Mitsubishi Electric Semiconductor – 2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM

MITSUBISHI LSIs
MH32S72BAFA -7,-8
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
DESCRIPTION
The MH32S72BAFA is 33554432 - word x 72-bit
Synchronous DRAM stacked structural module. This consist
of thirty-six industry standard 16M x 4 Synchronous
DRAMs in TSOP.
The stacked structure of TSOP on a card edge dual in-line
package provides any application where high densities and
large of quantities memory are required.
This is a socket-type memory module ,suitable for easy
interchange or addition of module.
FEATURES
Type name
MH32S72BAFA-7
MH32S72BAFA-8
Max.
Frequency
100MHz
CLK
Access Time
[latch mode]
(CL = 4)
6ns
100MHz
6ns
Utilizes industry standard 16M X 4 Synchronous DRAMs in
TSOP package , industry standard Resister in TSSOP
package , and industry standard PLL in TSSOP package.
Single 3.3V +/- 0.3V supply
Burst length 1/2/4/8/Full Page (programmable)
Burst type sequential / interleave (programmable)
Column access random
Burst Write / Single Write (programmable)
Auto precharge / Auto bank precharge controlled by A10
Auto refresh and Self refresh
LVTTL Interface
4096 refresh cycles every 64ms
Intel specifiation(rev. 1.0)compliant PCB and SPD 1.2A
APPLICATION
Main memory unit for computers, Microcomputer memory.
85pin 1pin
94pin
95pin
10pin
11pin
124pin 40pin
125pin 41pin
168pin 84pin
MIT-DS-0243-0.0
MITSUBISHI
ELECTRIC
29.July.1998
1