MH32S64PFJ-6 Datasheet, PDF (1/55 Pages) Mitsubishi Electric Semiconductor – 2147483648-BIT (33554432 - WORD BY 64-BIT)SynchronousDRAM

Preliminary Spec.
Some contents are subject to change without
notice.
MITSUBISHI LSIs
MH32S64PFJ -6, -6L -7,-7L
2147483648-BIT (33554432 - WORD BY 64-BIT)SynchronousDRAM
DESCRIPTION
The MH32S64PFJ is 33554432 - word by 64-bit
Synchronous DRAM module. This consists of eight
industry standard 16Mx16 Synchronous DRAMs in
TSOP and one industory standard EEPROM in
TSSOP.
The mounting of TSOP on a card edge Dual
Inline package provides any application where
high densities and large quantities of memory are
required.
This is a socket type - memory modules, suitable
for easy interchange or addition of modules.
FEATURES
-6,-6L
-7,-7L
Frequency
133MHz
100MHz
CLK Access Time
(Component SDRAM)
5.4 ns(CL=3)
6.0ns(CL=2)
PC133/100 Compliant
Utilizes industry standard 16M x 16 Synchronous
DRAMs TSOP and industry standard EEPROM in
TSSOP
144-pin (72-pin dual in-line package)
single 3.3V±0.3V power supply
Fully synchronous operation referenced to clock rising
edge
4 bank operation controlled by BA0,1(Bank Address)
/CAS latency- 2/3(programmable)
Burst length- 1/2/4/8/Full Page(programmable)
Burst type- sequential / interleave(programmable)
Column access - random
Auto precharge / All bank precharge controlled by A10
Auto refresh and Self refresh
8192 refresh cycle /64ms
LVTTL Interface
APPLICATION
main memory or graphic memory in computer systems
PCB Outline
(Front)
1
(Back)
2
MIT-DS-0337-0.2
MITSUBISHI
ELECTRIC
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26.Apr.2001