MH16V725BWJ-5 Datasheet, PDF (1/22 Pages) Mitsubishi Electric Semiconductor – HYPER PAGE MODE 1207959552 - BIT ( 16777216 - WORD BY 72 - BIT ) DYNAMIC RAM

Preliminary Spec.
Specifications subject to
change without notice.
MITSUBISHI LSIs
MH16V725BWJ -5, -6
HYPER PAGE MODE 1207959552 - BIT ( 16777216 - WORD BY 72 - BIT ) DYNAMIC RAM
DESCRIPTION
The MH16V725BWJ is 16777216-word x 72-bit dynamic
ram module. This consist of eighteen industry standard
16M x 4 dynamic RAMs in SOJ and one industry standard
EEPROM in TSSOP.
The mounting of SOJs and TSSOP on a card edge dual
in-line package provides any application where high
densities and large of quantities memory are required.
This is a socket-type memory module ,suitable for easy
interchange or addition of module.
FEATURES
Type name
/RAS /CAS Address /OE Cycle Power
access access access access
time time time time time dissipation
(max.ns) (max.ns) (max.ns) (max.ns) (min.ns) (typ.W)
MH16V725BWJ-5 _{50 13 25 13 84 5.40}
MH16V725BWJ-6 _{60 15 30 15 104 4.50}
PIN CONFIGURATION
85pin 1pin
94pin
95pin
10pin
11pin
Utilizes industry standard 16M x 4 RAMs in SOJ and industry
standard EEPROM in TSSOP
168-pin (84-pin dual dual in-line package)
Single +3.3V(±0.3V) supply operation
Low stand-by power dissipation
32.4mW(Max) . . . . . . . . . . . . . . . . . . . LVCMOS input level
Low operation power dissipation
MH16V725BWJ -5 . . . . . . . . . . . . . . . . . . 6.48W(Max)
MH16V725BWJ -6 . . . . . . . . . . . . . . . . . . 5.84W(Max)
All input are directly LVTTL compatible
All output are three-state and directly LVTTL compatible
Includes(0.22uF x 18) decoupling capacitors
4096 refresh cycle every 64ms (CBR Ref)
8192 refresh cycle every 64ms (RAS Only Ref,Normal R/W)
Hyper-page mode,Read-modify-write,
/CAS before /RAS refresh,Hidden refresh capabilities
Gold plating contact pads
Row Address A0 ~ A12
Column Address A0 ~ A10
APPLICATION
Main memory unit for computers , Microcomputer memory
BACK SIDE
124pin 40pin
125pin 41pin
FRONT SIDE
168pin 84pin
MIT-DS-0236-0.0
MITSUBISHI
ELECTRIC
( 1 / 22 )
27/Jul./1998