MH16S72PHB-7 Datasheet, PDF (1/55 Pages) Mitsubishi Electric Semiconductor – 1207959552-BIT (16777216 - WORD BY 72-BIT)SynchronousDRAM

Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH16S72PHB -7,-8,-10
1207959552-BIT (16777216 - WORD BY 72-BIT)SynchronousDRAM
DESCRIPTION
The MH16S72PHB is 16777216 - word by 72-bit
Synchronous DRAM module. This consists of nine
industry standard 16Mx8 Synchronous DRAMs in
TSOP and one industory standard EEPROM in
TSSOP.
The mounting of TSOP on a card edge Dual Inline
package provides any application where high
densities and large quantities of memory are
required.
This is a socket type - memory modules, suitable for
easy interchange or addition of modules.
FEATURES
Frequency
-7
100MHz
-8
100MHz
CLK Access Time
(Component SDRAM)
6.0ns(CL=3)
6.0ns(CL=3)
-10 100MHz
8.0ns(CL=3)
Utilizes industry standard 16M x 8 Synchronous DRAMs
TSOP and industry standard EEPROM in TSSOP
168-pin (84-pin dual in-line package)
single 3.3V±0.3V power supply
Clock frequency 100MHz
Fully synchronous operation referenced to clock rising
edge
4 bank operation controlled by BA0,1(Bank Address)
/CAS latency- 2/3(programmable)
Burst length- 1/2/4/8/Full Page(programmable)
Burst type- sequential / interleave(programmable)
Column access - random
Auto precharge / All bank precharge controlled by A10
Auto refresh and Self refresh
4096 refresh cycle /64ms
LVTTL Interface
Discrete IC and module design conform to
PC100 specification.
(module Spec. Rev. 1.0 and SPD 1.2A)
APPLICATION
PC main memory
85pin 1pin
94pin
95pin
10pin
11pin
124pin 40pin
125pin 41pin
168pin 84pin
MIT-DS-0298-0.0
MITSUBISHI
ELECTRIC
( 1 / 55 )
1/Jan. /1999