MH16S64AMA-8 Datasheet, PDF (1/52 Pages) Mitsubishi Electric Semiconductor – 1073741824-BIT (16777216 - WORD BY 64-BIT)SynchronousDRAM

Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH16S64AMA -8,-10,-12
1073741824-BIT (16777216 - WORD BY 64-BIT)SynchronousDRAM
DESCRIPTION
The MH16S64AMA is 16777216 - word by 64-bit
Synchronous DRAM module. This consists of sixteen
industry standard 16Mx4 Synchronous DRAMs in
TSOP and one industory standard EEPROM in
TSSOP.
The mounting of TSOP on a card edge Dual Inline
package provides any application where high
densities and large quantities of memory are
required.
This is a socket type - memory modules, suitable for
easy interchange or addition of modules.
FEATURES
Frequency
-8
125MHz
CLK Access Time
(Component SDRAM)
6ns(CL=3)
-10
100MHz
8ns(CL=3)
85pin 1pin
94pin
95pin
10pin
11pin
-12
83MHz
8ns(CL=3)
Utilizes industry standard 16M x 4 Synchronous DRAMs
TSOP and industry standard EEPROM in TSSOP
168-pin (84-pin dual in-line package)
single 3.3V±0.3V power supply
Clock frequency 125MHz/100MHz/83MHz
Fully synchronous operation referenced to clock rising
edge
Dual bank operation controlled by BA0,1(Bank Address)
/CAS latency- 2/3(programmable)
Burst length- 1/2/4/8(programmable)
Burst type- sequential / interleave(programmable)
Column access - random
Auto precharge / All bank precharge controlled by A10
Auto refresh and Self refresh
4096 refresh cycle /64ms
LVTTL Interface
124pin 40pin
125pin 41pin
168pin 84pin
APPLICATION
main memory or graphic memory in computer systems
MIT-DS-0127-0.0
MITSUBISHI
ELECTRIC
( 1 / 52 )
4. Mar.1997