MGFX39V0717_11 Datasheet, PDF (1/3 Pages) Mitsubishi Electric Semiconductor – 10.7-11.7 GHz BAND / 8W

< X/Ku band internally matched power GaAs FET >
MGFX39V0717
10.7 – 11.7 GHz BAND / 8W
DESCRIPTION
The MGFX39V0717 is an internally impedance-matched
GaAs power FET especially designed for use in 10.7 – 11.7
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Internally impedance matched
 High output power
P1dB=8.0W (TYP.) @f=10.7 – 11.7GHz
 High linear power gain
GLP=7.0dB (TYP.) @f=10.7 – 11.7GHz
 High power added efficiency
P.A.E.=26% (TYP.) @f=10.7 – 11.7GHz
APPLICATION
 For use in 10.7 – 11.7 GHz band power amplifiers
QUALITY
 IG
RECOMMENDED BIAS CONDITIONS
 VDS=10V  ID=2.4A Refer to Bias Procedure
Absolute maximum ratings (Ta=25C)
Symbol
Parameter
Ratings
VGDO ^{Gate to drain} breakdown voltage
-15
VGSO Gate to source breakdown voltage
-15
ID
Drain current
5.6
IGR Reverse gate current
-18
IGF
Forward gate current
36
PT *1 Total power dissipation
42.8
Tch
Cannel temperature
175
Tstg Storage temperature
*1 : Tc=25C
-65 to +175
Unit
V
V
A
mA
mA
W
C
C
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Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Electrical characteristics (Ta=25C)
Symbol
Parameter
Test conditions
IDSS
Saturated drain current
gm
Transconductance
VGS(off) ^{Gate to source cut-off voltage}
P1dB
Output power at 1dB gain compression
GLP
Linear Power Gain
P.A.E.
Power added efficiency
Rth(ch-c) *2 Thermal resistance
*2 :Channel-case
VDS=3V,VGS=0V
VDS=3V,ID=2.2A
VDS=3V,ID=20mA
VDS=10V,ID(RF off)=2.4A
f=10.7 – 11.7GHz
Min.
-
-
-2
37.5
6
-
-
Limits
Typ.
4
2
-3
39
7
26
-
Max.
5.6
-
-4
-
-
-
3.5
Unit
A
S
V
dBm
dB
%
C/W
Publication Date : Apr., 2011
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