MGFS48V2527_04 Datasheet, PDF (1/6 Pages) Mitsubishi Electric Semiconductor – 2.5 - 2.7GHz BAND 60W GaAs FET

MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFS48V2527
2.5 - 2.7GHz BAND 60W GaAs FET
DESCRIPTION
OUTLINE
The MGFS48V2527 is a 60W push-pull type GaAs Power FET
especially designed for use in 2.5 - 2.7GHz band amplifiers.
The hermetically sealed metal-ceramic package guarantees high reliability.
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FEATURES
Push-pull configuration
High output power
Pout = 60W (TYP.) @ f=2.5 - 2.7 GHz
High power gain
GLP = 10 dB (TYP.) @ f=2.5 - 2.7GHz
High power added efficiency
P.A.E. = 45 % (TYP.) @ f=2.5 - 2.7GHz
APPLICATION
2.5-2.7GHz band power amplifier


 

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QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS = 12 (V)
ID = 4.0 (A)
RG=20 (ohm) for each gate
ABSOLUTE MAXIMUM RATINGS
(Ta=25deg.C)
Symbol
VGDO
VGSO
PT *1
Tch
Tstg
Parameter
Gate to drain voltage
Gate to source voltage
Total power dissipation
Channel temperature
Storage temperature
Ratings
-20
-10
107.1
175
-65 / +175
Unit
V
V
W
deg.C
deg.C
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 UQWTEG
 FTCKP
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< Keep safety first in your circuit designs! >
Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable,
but there is always the possibility that trouble may occur
with them.Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs,
with appropriate measures such as (1)placement of
substitutive, auxiliary circuits, (2)use of non-flammable
material or (3)prevention against any malfunction or mishap.
*1 : Tc=25deg.C
ELECTRICAL CHARACTERISTICS
(Ta=25deg.C)
Symbol
Parameter
VGS(off)
P2dB
GLP
ID(RF)
P.A.E.
Rth (Ch-C)
Cut-off voltage
Output power at 2dB gain
compression
Linear power gain
Drain current
Power added efficiency
Thermal resistance
Test conditions
VDS = 3V , ID = 17.3mA
VDS=12V, ID(RF off)=4.0A, f=2.5 - 2.7GHz
Channel to Case
Min.
-1
Limits
Typ. Max.
-
-4
Unit
V
47
48
-
dBm
9
10
-
dB
-
11
15
A
-
45
-
%
-
1.0
1.4 deg.C/W
MITSUBISHI
ELECTRIC
June-'04
(1/6)