MGFS48B2122_11 Datasheet, PDF (1/2 Pages) Mitsubishi Electric Semiconductor – 2.11-2.17 GHz BAND / 60W

< L/S band internally matched power GaAs FET >
MGFS48B2122
2.11 – 2.17 GHz BAND / 60W
DESCRIPTION
The MGFS48B2122 is a 60W push-pull type GaAs power FET
especially designed for use in 2.11 – 2.17GHz band amplifiers.
The hermetically sealed metal-ceramic package guarantees
high reliability.
OUTLINE
FEATURES
Push-pull configuration
 High output power
Pout=60W (TYP.) @f=2.17GHz
 High power gain
GLP=12.0dB (TYP.) @f=2.17GHz
 High power added efficiency
P.A.E.=48% (TYP.) @f=2.17GHz
APPLICATION
 2.11-2.17GHz band power amplifier for W-CDMA Base Station
QUALITY
 IG
2 0.4 ±0. 2
1
2.0±0.15
1
2.0±0.15
2
3
6.0 3
24. 0±0 .3
16 .2
unit : mm
GF-47
1 gate
2 source
3 drain
RECOMMENDED BIAS CONDITIONS
 VDS=12V  ID=2.0A  RG=25ohm for each gate
Absolute maximum ratings (Ta=25C)
Symbol
Parameter
Ratings
VGDO ^{Gate to drain} breakdown voltage
-20
VGSO Gate to source breakdown voltage
-10
PT *1 Total power dissipation
125
Tch
Cannel temperature
175
Tstg Storage temperature
*1 : Tc=25C
-65 to +175
Unit
V
V
W
C
C
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Electrical characteristics (Ta=25C)
Symbol
Parameter
Test conditions
Min.
GLP
Linear Power Gain
VDS=12V,ID(RF off)=2.0A,f=2.17GHz
11
Pin=22dBm
Pout
Output Power
VDS=12V,ID(RF off)=2.0A,f=2.17GHz 47
ID
Drain current
Pin=39dBm
-
P.A.E.
Power added efficiency
-
Rth(ch-c) *2 Thermal resistance
delta Vf method
-
*2 :Channel-case
Limits
Typ.
12
48
11
48
1
Max.
-
-
15
-
1.2
Unit
dB
dBm
A
%
C/W
Publication Date : Apr., 2011
1