MGFS45V2527A_11 Datasheet, PDF (1/3 Pages) Mitsubishi Electric Semiconductor – 2.7-3.5 GHz BAND / 30W

< L/S band internally matched power GaAs FET >
MGFS45V2527A
2.5 – 2.7 GHz BAND / 32W
DESCRIPTION
The MGFS45V2527A is an internally impedance-matched
GaAs power FET especially designed for use in 2.5 - 2.7
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
 High output power
P1dB=32W (TYP.) @f=2.5 - 2.7GHz
 High power gain
GLP=12.0dB (TYP.) @f=2.5 - 2.7GHz
 High power added efficiency
P.A.E.=45% (TYP.) @f=2.5 - 2.7GHz
 Low distortion [item -51]
IM3=-45dBc (TYP.) @Po=34.5dBm S.C.L
APPLICATION
 item 01 : 2.5 - 2.7 GHz band power amplifier
 item 51 : 2.5 - 2.7 GHz band digital radio communication
OUTLINE DRAWING
Unit : millimeters (inches)
24.0±0.3(0.945±0.012)
1
0.6± 0.15
(0.024±0.006)
2
3
20.4±0.2(0.803±0.008)
15.8(0.622)
QUALITY
 IG
RECOMMENDED BIAS CONDITIONS
 VDS=10V  ID=6.5A  RG=25ohm
Absolute maximum ratings (Ta=25C)
Symbol
Parameter
Ratings
VGDO ^{Gate to drain} breakdown voltage
-15
VGSO Gate to source breakdown voltage
-15
ID
Drain current
22
IGR Reverse gate current
-61
IGF
Forward gate current
76
PT *1 Total power dissipation
88
Tch
Cannel temperature
175
Tstg Storage temperature
*1 : Tc=25C
-65 to +175
Unit
V
V
A
mA
mA
W
C
C
GF-51
1 GATE
2 SOURCE(FLANGE)
3 DRAIN
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Electrical characteristics (Ta=25C)
Symbol
Parameter
Test conditions
VGS(off)
P1dB
GLP
ID
P.A.E.
IM3 *2
Gate to source cut-off voltage
Output power at 1dB gain compression
Linear Power Gain
Drain current
Power added efficiency
3rd order IM distortion
VDS=3V,ID=60mA
VDS=10V,ID(RF off)=6.5A
f=2.5 - 2.7GHz
Min.
-
44
11
-
-
-42
Limits
Typ.
-
45
12
7.5
45
-45
Max.
-5
-
-
-
-
-
Unit
V
dBm
dB
A
%
dBc
Rth(ch-c) *3 Thermal resistance
delta Vf method
-
-
*2 :item -51 ,2 tone test,Po=34.5dBm Single Carrier Level ,f=2.5,2.6,2.7GHz,delta f=5MHz
*3 :Channel-case
1.5
C/W
Publication Date : Apr., 2011
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