MGFS45V2123 Datasheet, PDF (1/2 Pages) Mitsubishi Electric Semiconductor – 2.1 - 2.3GHz BAND 30W INTERNALLY MATCHD GaAs FET

MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFS45V2123
2.1~2.3GHz BAND 30W INTERNALLY MATCHD GaAs FET
DESCRIPTION
The MGFS45V2123 is an internally impedance matched
GaAs power FET especially designed for use in 2.1~2.3
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50 (Ω) system
High output power
P1dB=30W (TYP.) @f=2.1~2.3GHz
High power gain
GLP=12dB (TYP.) @f=2.1~2.3GHz
High power added efficiency
ηadd=45% (TYP.) @f=2.1~2.3GHz
Loe distortion [item -51]
IM3= -45dBc (TYP.) @Po=34.5dBm S.C.L.
APPLICATION
item 01 : 2.1~2.3GHz band power amplifier
item 51 : 2.1~2.3GHz band digital radio communication
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS=10V
ID=6.5A
RG=25Ω
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Symbol
Parameter
Ratings Unit
VGDO Gate to drain voltage
-15
V
VGSO Gate to source voltage
-15
V
ID
Drain current
22
A
IGR
Reverse gate current
-61
mA
IGF
Forward gate current
76
mA
PT
Total power dissipation
*1
88
W
Tch Channel temperature
175
°C
Tstg Storage temperature
-65 ~ +175 °C
*1 : Tc=25°C
ELECTRICAL CHARACTERISTICS (Ta=25°C)
OUTLINE DRAWING
Until : millimeters (inches)
24±0.3 (0.945±0.012)
(0.024±0.006)
0.6±0.15
R1.2
20.4±0.2 (0.803±0.008)
16.7 (0.658)
GF-38
(1) GATE
(2) Source (FLANGE)
(3) DRAIN
< Keep safety first in your circuit designs! >
Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable,
but there is always the possibility that trouble may occur
with them.Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs,
with appropriate measures such as (i)placement of
substitutive, auxiliary circuits, (ii)use of non-flammable
material or (iii)prevention against any malfunction or mishap.
Symbol
Parameter
Test conditions
Min.
VGS (off) Saturated drain current
VDS=3V, ID=60mA
—
P1dB
Output power at 1dB gain
compression
44
GLP
Linear power gain
VDS=10V, ID(RF off)=6.5A, f=2.1~2.3GHz 11
ID
Drain current
—
ηadd
Power added efficiency
—
IM3
3rd order IM distortion
*1
-42
Rth (ch-c) Thermal resistance
*2 ∆Vf method
—
*1 : item -51, 2 tone test, Po=34.5dBm Single Carrier Level, f=2.1, 2.2, 2.3GHz,∆f=5MHz
*2 : Channel to case
Limits
Typ.
—
45
12
7.5
45
-45
—
Unit
Max
-5
V
— dBm
—
dB
—
A
—
%
— dBc
1.7 °C/W
MITSUBISHI
ELECTRIC