MGFS45B2527B Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – 2.5-2.7 GHz BAND / 30W

< L/S band internally matched power GaAs FET >
MGFS45B2527B
2.5 – 2.7 GHz BAND / 30W
DESCRIPTION
The MGFS45B2527B is an internally impedance-matched
GaAs power FET especially designed for use in 2.5 – 2.7
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class AB operation
Internally matched to 50(ohm) system
 High output power
Po(SAT)=30W (TYP.) @f=2.5 – 2.7GHz
 High power gain
GLP=12.5dB (TYP.) @f=2.5 – 2.7GHz
 Distortion
EVM=1.0% (TYP.) @f=2.5 – 2.7GHz, Po=34dBm
EVM=2.0% (TYP.) @f=2.5 – 2.7GHz, Po=37dBm
RECOMMENDED BIAS CONDITIONS
 VDS=12V  ID=0.9A  RG=10ohm
Absolute maximum ratings (Ta=25C)
Symbol
Parameter
Ratings
VGDO ^{Gate to drain} breakdown voltage
-15
VGSO Gate to source breakdown voltage
-10
MAXID Maximum drain current
10
PT *1 Total power dissipation
78
Tch
Cannel temperature
175
Tstg Storage temperature
*1 : Tc=25C
-55 to +150
Unit
V
V
A
W
C
C
Electrical characteristics (Ta=25C)
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Symbol
Parameter
Test conditions
Limits
Unit
Min.
Typ.
Max.
VGS(off) ^{Gate to source cut-off voltage}
VDS=3V,ID=100mA
-0.5
-
-3.0
V
Po(SAT) Output Power
VDS=12V,ID(RF off)=0.9A
-
45
-
dBm
f=2.5 – 2.7GHz
GLP
Power Gain
VDS=12V,ID(RF off)=0.9A
10.0
12.5
-
dB
ID
Drain current
f=2.5 – 2.7GHz ,Pout=34dBm
-
1.2
1.5
A
EVM *2
Error Vector Magnitude
-
1.0
2.0
%
Rth(ch-c) *3 Thermal resistance
delta Vf method
-
1.2
1.9
C/W
*2 :WiMAX Downlink, 64QAM-3/4, Channel Bandwidth:6MHz
*3 :Channel-case
Publication Date : Apr., 2011
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