MGFS45A2527B Datasheet, PDF (1/6 Pages) Mitsubishi Electric Semiconductor – 2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET

MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFS45A2527B
2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET
DESCRIPTION
The MGFS45A2527B is an internally impedance-matched
GaAs power FET especially designed for use in 2.5 - 2.7
GHz band amplifiers.The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB = 32W (TYP.) @ f=2.5 - 2.7 GHz
High power gain
GLP = 12 dB (TYP.) @ f=2.5 - 2.7GHz
High power added efficiency
P.A.E. = 40 % (TYP.) @ f=2.5 - 2.7GHz
3rd order IM distortion
IM = -45dBc (TYP.) @ f=2.5 - 2.7GHz
APPLICATION
item 01 : 2.5 - 2.7 GHz band power amplifier
item 51 : 2.5 - 2.7 GHz band digital ratio communication
176.+0'&4#9+0)
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r r

r
r


r r
 
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
VDS = 10 (V)
ID = 6.5 (A)
RG=25 (ohm)
)(
 )#6'
 5174%' (.#0)'
 &4#+0
ABSOLUTE MAXIMUM RATINGS
(Ta=25deg.C)
Symbol
Parameter
VGDO Gate to drain voltage
VGSO Gate to source voltage
PT *1 Total power dissipation
Tch Channel temperature
Tstg Storage temperature
*1 : Tc=25deg.C
Ratings
-20
-10
107
175
-65 / +175
Unit
V
V
W
deg.C
deg.C
< Keep safety first in your circuit designs! >
Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable,
but there is always the possibility that trouble may occur
with them.Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs,
with appropriate measures such as (1)placement of
substitutive, auxiliary circuits, (2)use of non-flammable
material or (3)prevention against any malfunction or mishap.
ELECTRICAL CARACTERISTICS
(Ta=25deg.C)
Symbol
Parameter
Test conditions
VGS(off) Gate to source cut-offívoltage
VDS = 3V , ID = 84mA
P1dB
Output power
GLP
ID
Linear power gain
Drain current
VDS=10V, ID(RF off)=6.5A, f=2.5 - 2.7GHz
P.A.E.
Power added efficiency
IM3 *2
3rd order IM distortion
Rth(ch-c) *3
Thermal resistance
delta Vf method
*2 : item -51,2 tone test,Po=34.5dBm Single Carrier Level,f=2.5,2.6,2.7GHz,delta f=5MHz
*3 : Channel-case
MITSUBISHI
ELECTRIC
Min.
-
44
11
-
-
-42
-
Limits
Typ.
-
45
12
7.5
40
-45
1.2
Max.
-5
-
-
-
-
-
1.4
Unit
V
dBm
dB
A
%
dBc
deg.C/W
June-'04
(1/6)