MGFS44V2735_11 Datasheet, PDF (1/3 Pages) Mitsubishi Electric Semiconductor – 2.7-3.5 GHz BAND / 24W

< L/S band internally matched power GaAs FET >
MGFS44V2735
2.7 – 3.5 GHz BAND / 24W
DESCRIPTION
The MGFS44V2735 is an internally impedance-matched
GaAs power FET especially designed for use in 2.7 - 3.5
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
 High output power
P1dB=24W (TYP.) @f=2.7 - 3.5GHz
 High power gain
GLP=12.0dB (TYP.) @f=2.7 - 3.5GHz
 High power added efficiency
P.A.E.=36% (TYP.) @f=2.7 - 3.5GHz
 Low distortion [item -51]
IM3=-45dBc (TYP.) @Po=33.5dBm S.C.L
OUTLINE
R1.2
24 +/- 0.3
unit : mm
0.6 +/- 0.15
(1 )
(2 )
(3 )
APPLICATION
 item 01 : 2.7 - 3.5 GHz band power amplifier
 item 51 : 2.7 - 3.5 GHz band digital radio communication
20.4 +/- 0.2
16.7
QUALITY
 IG
RECOMMENDED BIAS CONDITIONS
 VDS=10V  ID=6.4A  RG=25ohm
Absolute maximum ratings (Ta=25C)
Symbol
Parameter
Ratings
VGDO ^{Gate to drain} breakdown voltage
-15
VGSO Gate to source breakdown voltage
-15
ID
Drain current
20
IGR Reverse gate current
-60
IGF
Forward gate current
126
PT *1 Total power dissipation
125
Tch
Cannel temperature
175
Tstg Storage temperature
*1 : Tc=25C
-65 to +175
Unit
V
V
A
mA
mA
W
C
C
GF-38
(1) gate
(2) source(flange)
(3)drain
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Electrical characteristics (Ta=25C)
Symbol
Parameter
Test conditions
Min.
IDSS
Saturated drain current
VDS=3V,VGS=0V
-
gm
Transconductance
VDS=3V,ID=6.4A
-
VGS(off) ^{Gate to source cut-off voltage}
VDS=3V,ID=160mA
-2
P1dB
Output power at 1dB gain compression VDS=10V,ID(RF off)=6.4A
43
GLP
Linear Power Gain
f=2.7 – 3.5GHz
11
ID
Drain current
-
P.A.E.
Power added efficiency
-
IM3 *2
3rd order IM distortion
-42
Rth(ch-c) *3 Thermal resistance
delta Vf method
-
*2 :item -51 ,2 tone test,Po=33.5dBm Single Carrier Level ,f=2.7,3.1,3.5GHz,delta f=10MHz
*3 :Channel-case
Limits
Typ.
18
6.5
-
44
12
6.4
36
-45
1
Max.
-
-
-5
-
-
-
-
-
1.2
Unit
A
S
V
dBm
dB
A
%
dBc
C/W
Publication Date : Apr., 2011
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