MGFS39E3336-01 Datasheet, PDF (1/14 Pages) Mitsubishi Electric Semiconductor – 3.3-3.6GHz HBT Integrated Circuit

Specifications are subject to change without notice.
DESCRIPTION
MGFS39E3336 is a 4-stage GaAs RF amplifier
Designed for WiMAX CPE.
FEATURES
• InGaP HBT Device
• 6V Operation
• 30dBm Linear Output Power (64QAM, EVM=2.5%)
• 40dB Linear Gain
• Integrated Output Power Detector
• Integrated 1-bit 20dB Step Attenuator
• Surface Mount Package
• RoHS Compliant Package
APPLICATION
IEEE802.16-2004
FUNCTIONAL BLOCK DIAGRAM
MITSUBISHI SEMICONDUCTOR
MGFS39E3336-01
3.3-3.6GHz HBT Integrated Circuit
Outline Drawing
6.0
0.9
1
30
2
3
39E3336
29
28
4
27
6.0 ⁵
6
(Lot. No)
26
25
7
24
8
9
JAPAN
23
22
10
21
1
30
2
29
3
28
4
27
5
26
6
25
7
24
8
23
9
22
10
21
DIM in mm
Top view
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always
the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of
substitutive, auxiliary, circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap.
MITSUBISHI ELECTRIC CORP.
(1/14)
Rev.5.2
Sep. 30-2009