MGFS39E2527A-01 Datasheet, PDF (1/20 Pages) Mitsubishi Electric Semiconductor – 2.5-2.7GHz HBT Integrated Circuit

Specifications are subject to change without notice.
MITSUBISHI SEMICONDUCTOR
MGFS39E2527A-01
2.5-2.7GHz HBT Integrated Circuit
DESCRIPTION
MGFS39E2527A is a 4-stage amplifier designed
for WiMAX CPE.
FEATURES
• InGaP HBT Device
• 6V Operation
• 30dBm Linear Output Power (64QAM, EVM=2.5%)
• 40dB Linear Gain
• Integrated Output Power Detector
• Integrated 1-bit Step Attenuator
• Surface Mount Package
• RoHS Compliant Package
APPLICATION
IEEE802.16-2004
FUNCTIONAL BLOCK DIAGRAM
Outline Drawing
6.0
0.9
1
2
3
4
6.0 ⁵
6
7
8
9
10
30
39E2527A
29
28
27
(Lot. No)
26
25
24
JAPAN
23
22
21
1
30
2
29
3
28
4
27
5
26
6
25
7
24
8
23
9
22
10
21
DIM in mm
Top view
Vc1
Vcont
RF IN
Vc2 Vc3,Vcb3,4
Vcb1
Vcb2
Bias Circuit
Vc4
RF OUT
External
Output
Matching
Circuits
Vdet
Vref1,2
Vref3,4
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always
the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of
substitutive, auxiliary, circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap.
MITSUBISHI ELECTRIC CORP.
(1/20)
Rev. 1.0
Sep. 30-2009