MGFS38E3336-01 Datasheet, PDF (1/24 Pages) Mitsubishi Electric Semiconductor – 3.3 - 3.6GHz HBT MMIC MODULE

Specifications are subject to change without notice.
DESCRIPTION
MGFS38E3336 is a GaAs RF amplifier designed
for WiMAX CPE.
FEATURES
• InGaP HBT Device
• 5V Operation
• 28.5dBm Linear Output Power (64QAM, EVM=2.5%)
• 35dB Linear Gain
• Integrated Output Power Detector
• Integrated 1-bit Step Attenuator
• Surface Mount Package
• RoHS Compliant Package
APPLICATIONS
IEEE802.16-2004
IEEE802.16e-2005
FUNCTIONAL BLOCK DIAGRAM
Mitsubishi Semiconductors
MGFS38E3336-01
3.3 - 3.6GHz HBT MMIC MODULE
Outline Drawing
4.0
DIM in mm
1.0
10 9 8 7 6
GND
12 345
X-ray Top View
1 Pin
2 Vc1, Vcb
3 Vc2
4 Vc3
5 Vc4
6 Pout
7 Vdet
8 GND
9 Vref
10 Vcont
Pin
Vcont
(0V/3.3V)
Vc1,Vcb
(5V)
Gain control
Pout
Bias Circuit
Detector Circuit
Vc2(5V) Vref(2.85V) ^Vc3(5V) Vc4(5V)
Power
Detector
Vdet
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always
the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of
substitutive, auxiliary, circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap.
MITSUBISHI ELECTRIC CORPORATION
(1/24)
Rev. 1.1
Sep. -2010