MGFS36E3436A_10 Datasheet, PDF (1/8 Pages) Mitsubishi Electric Semiconductor – 3.4-3.6GHz HBT HYBRID IC

Specifications are subject to change without notice.
DESCRIPTION
MGFS36E3436A is a GaAs RF amplifier designed
for WiMAX CPE.
FEATURES
• InGaP HBT Device
• 6V Operation
• 30dB Linear Gain
• 2.5% EVM at an Output power of 25dBm
• 4% EVM at an Output power of 27dBm
• Integrated Output Power Detector
• Integrated 1-bit 21dB Step Attenuator
• 50Ω Matched Input/Output Ports
• Surface Mount Package
• RoHS Compliant Package
APPLICATIONS
IEEE802.16-2004, IEEE802.16e-2005
FUNCTIONAL BLOCK DIAGRAM
MITSUBISHI SEMICONDUCTOR
MGFS36E3436A
3.4-3.6GHz HBT HYBRID IC
Outline Drawing
4.5
1.0
36E
4.5
32453267A
(Lot No.)
10 9 8 7 6
12345
(X-ray Top View)
1 Pin
2 Vc (Vcb)
3 Vc (Vc1)
4 Vc (Vc2)
5 Vc (Vc3)
6 Pout
7 Po_det
8 GND
9 Vref
10 Vcont
DIM IN mm
Pin
Vcont
(0/3V)
Vcb
Vc1
1000pF
Vc2 Vc3
1000pF
1000pF
Pout
1000pF
Bias Circuit
1³5³k^ko^oh^hmm^s
Po_det
Vref
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always
the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of
substitutive, auxiliary, circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap.
MITSUBISHI ELECTRIC CORP.
(1/8)
July-2008