MGFS36E2527_08 Datasheet, PDF (1/7 Pages) Mitsubishi Electric Semiconductor – 2.5-2.7GHz HBT HYBRID IC

Specifications are subject to change without notice.
DESCRIPTION
MGFS36E2527 is a GaAs RF amplifier designed
for WiMAX CPE.
FEATURES
• InGaP HBT Device
• 6V Operation
• 27dBm Linear Output Power
• 33dB Linear Gain
• Integrated Output Power Detector
• Integrated 1-bit 19dB Step Attenuator
• 50ohms Matched
• Surface Mount Package
• RoHS Compliant Package
APPLICATIONS
IEEE802.16-2004, IEEE802.16e-2005
FUNCTIONAL BLOCK DIAGRAM
MITSUBISHI SEMICONDUCTOR
MGFS36E2527
2.5-2.7GHz HBT HYBRID IC
Outline Drawing
4.5
1.0
36E
4.5
2527
(Lot No.)
10 9 8 7 6
12345
(X-ray Top View)
1 Pin
2 Vc (Vcb)
3 Vc (Vc1)
4 Vc (Vc2)
5 Vc (Vc3)
6 Pout
7 Po_det
8 GND
9 Vref
10 Vcont
DIM IN mm
Pin
Vcont
(0/3V)
Vcb
Vc1
1000pF
Vc2 Vc3
1000pF
1000pF
Pout
1000pF
Bias Circuit
Po_det
33kohms
Vref
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the
possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give
due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of substitutive, auxiliary, circuits,
(ii)use of non-flammable material or (iii)prevention against any malfunction or mishap.
MITSUBISHI ELECTRIC CORP.
(1/7)
January-2008